IRFBC30APBF

IRFBC30A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low gate charge Qg results in simple drive requirement TO-220AB • Improved gate, avalanche, and dynamic dV/dt ruggedness G G D Available • Fully characterized capacitance and avalanche voltage and current S • Effective Coss specified S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Available 600 VGS = 10 V 2.2 Qg max. (nC) 23 APPLICATIONS Qgs (nC) 5.4 • Switch mode power supply (SMPS) Qgd (nC) 11 Configuration • Uninterruptable power supply Single • High speed power switching TYPICAL SMPS TOPOLOGY • Single Transistor flyback ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFBC30APbF Lead (Pb)-free and halogen-free IRFBC30APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS ± 30 Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 3.6 2.3 A 14 0.69 W/°C Single pulse avalanche energy b EAS 290 mJ Repetitive avalanche current a IAR 3.6 A Repetitive avalanche energy a EAR 7.4 mJ Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw PD 74 W dV/dt 7.0 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12) c. ISD ≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0868-Rev. C, 16-Aug-2021 Document Number: 91108 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 μA - - 2.2 Ω gfs VDS = 50 V, ID = 2.2 A b 2.1 - - S Input capacitance Ciss - 510 - Output capacitance Coss - 70 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 3.5 - VDS = 1.0 V, f = 1.0 MHz - 730 - VDS = 480 V, f = 1.0 MHz - 19 - VDS = 0 V to 480 V c - 31 - - - 23 - - 5.4 - - 11 Drain-source on-state resistance Forward transconductance RDS(on) ID = 2.2 A b VGS = 10 V Dynamic Output capacitance Effective output capacitance Coss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time VGS = 0 V Coss eff. tr td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 3.6 A, VDS = 480 V see fig. 6 and 13 b - 9.8 - VDD = 300 V, ID = 3.6 A, Rg = 12 Ω, RD = 82 Ω, see fig. 10 b - 13 - - 19 - - 12 - f = 1 MHz, open drain 0.8 - 4.6 - - 3.6 - - 14 pF nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 3.6 A, VGS = 0 S Vb TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs b - - 1.6 V - 400 600 ns - 1.1 1.7 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0868-Rev. C, 16-Aug-2021 Document Number: 91108 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.01 4.0 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 1 4.5V 20µs PULSE WIDTH TJ = 150 ° C 1 10 Fig. 2 - Typical Output Characteristics S21-0868-Rev. C, 16-Aug-2021 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VDS , Drain-to-Source Voltage (V) 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 0.1 5.0 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 10 V DS = 50V 20μs PULSE WIDTH ID = 3.6A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91108 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss 100 Coss 10 Crss 100 ISD , Reverse Drain Current (A) 10000 Vishay Siliconix 10 TJ = 150° C TJ = 25 ° C 1 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 0.6 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V 16 12 8 10us 10 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 4 1.2 100 ID = 3.6A 0 1.0 VSD ,Source-to-Drain Voltage (V) ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 0.1 0.4 8 12 16 20 24 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S21-0868-Rev. C, 16-Aug-2021 0.1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91108 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com Vishay Siliconix RD VDS 4.0 VGS D.U.T. ID , Drain Current (A) RG + - VDD 3.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit VDS 1.0 90 % 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T RG IAS 20 V tp tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit S21-0868-Rev. C, 16-Aug-2021 IAS Fig. 12b - Unclamped Inductive Waveforms Document Number: 91108 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 700 ID 1.6A 2.3A 3.6A TOP 600 BOTTOM 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current QG 10 V V DSav , Avalanche Voltage ( V ) 740 QGS QGD VG 720 Charge 700 Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 680 660 50 kΩ 12 V 0.2 µF 0.3 µF + 640 0.0 1.0 2.0 3.0 D.U.T. 4.0 IAV , Avalanche Current ( A) - VDS VGS 3 mA IG ID Current sampling resistors Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current S21-0868-Rev. C, 16-Aug-2021 Fig. 13b - Gate Charge Test Circuit Document Number: 91108 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91108. S21-0868-Rev. C, 16-Aug-2021 Document Number: 91108 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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