IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
600
RDS(on) ()
VGS = 10 V
1.2
Qg (Max.) (nC)
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
COMPLIANT
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
TO-220AB
G
D
Available
RoHS*
DESCRIPTION
D
G
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V, VGS Rating
Reduced Ciss, Coss, Crss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFBC40LCPbF
SiHFBC40LC-E3
IRFBC40LC
SiHFBC40LC
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
600
± 30
6.2
3.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300d
10
1.1
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.70
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = 20
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
100
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 3.7 Ab
VGS = 10 V
VDS = 100 V, ID = 3.7 Ab
μA
-
-
1.2
3.7
-
-
S
-
1100
-
-
140
-
-
15
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 6.2 A, VDS = 360 V,
see fig. 6 and 13b
-
-
39
-
-
10
pF
nC
Gate-Drain Charge
Qgd
-
-
19
Turn-On Delay Time
td(on)
-
12
-
-
20
-
-
27
-
-
17
-
-
4.5
-
-
7.5
-
-
-
6.2
S
-
-
25
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
-
-
1.5
V
-
440
680
ns
-
2.1
3.2
μC
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = 300 V, ID = 6.2 A
Rg = 9.1 , RD = 47, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
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2
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
101
4.5 V
10-1
ID, Drain Current (A)
ID, Drain Current (A)
101
25 °C
100
20 µs Pulse Width
TC = 25 °C
10-2
10-2
10-1
100
101
91114_01
4
4.5 V
10-1
10-2
10-2
91114_02
20 µs Pulse Width
TC = 150 °C
10-1
100
101
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
3.5
3.0
7
8
9
10
ID = 6.2 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
102
VDS, Drain-to-Source Voltage (V)
6
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain Current (A)
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
5
VGS, Gate-to-Source Voltage (V)
91114_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
20 µs Pulse Width
VDS = 100 V
10-1
102
VDS, Drain-to-Source Voltage (V)
150 °C
91114_04
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
2400
Capacitance (pF)
2000
ISD, Reverse Drain Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1600
Ciss
1200
Coss
800
Crss
400
101
25 °C
0
VGS = 0 V
100
100
101
0.6
VDS, Drain-to-Source Voltage (V)
91114_05
103
2
VDS = 300 V
VDS = 180 V
12
Operation in this area limited
by RDS(on)
5
VDS = 240 V
8
102
5
10 µs
2
10
100 µs
5
2
1 ms
1
10 ms
5
2
0.1
4
TC = 25 °C
TJ = 150 °C
Single Pulse
5
For test circuit
see figure 13
0
0
91114_06
8
16
24
32
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
2
10-2
0.1
40
QG, Total Gate Charge (nC)
1.4
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 5.2 A
16
1.0
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
20
0.8
91114_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
150 °C
91114_08
2
5
1
2
5
10
2
5
102
2
5
103
2
5
104
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
7.0
10 V
ID, Drain Current (A)
6.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5.0
Fig. 10a - Switching Time Test Circuit
4.0
3.0
VDS
2.0
90 %
1.0
0.0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (°C)
91114_09
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 − 0.5
PDM
0.2
0.1
0.1
t1
0.05
t2
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
91114_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
Rg
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
2.8 A
3.9 A
Bottom 5.2 A
Top
1000
800
600
400
200
0
VDD = 50 V
25
91114_12c
50
75
100
150
125
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91114.
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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