0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRFBC40LPBF

IRFBC40LPBF

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT226

  • 描述:

    MOSFET N-CH 600V 6.2A TO-262

  • 数据手册
  • 价格&库存
IRFBC40LPBF 数据手册
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single D DESCRIPTION I2PAK Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. D2PAK (TO-263) (TO-262) G G G D S D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHFBC40S-GE3 IRFBC40SPbF SiHFBC40S-E3 D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40STL-E3a I2PAK (TO-262) SiHFBC40L-GE3 IRFBC40LPbF SiHFBC40L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltagee Gate-Source Voltagee Continuous Drain Current SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C Currenta,e IDM Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation ID EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = 6.2 A (see fig. 12). c. ISD  6.2 A, dI/dt  80 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses IRFBC40, SiHFBC40 data and test conditions. LIMIT 600 ± 20 6.2 3.9 25 1.0 570 6.2 13 130 3.1 3.0 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91116 S11-1053-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA - 40 Maximum Junction-to-Case RthJC - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 3.7 Ab VGS = 10 V VDS = 100 V, ID = 3.7 Ab μA - - 1.2  4.7 - - S - 1300 - - 160 - - 30 - - - 60 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 6.2 A, VDS = 480 V, see fig. 6 and 13b, c VDD = 300 V, ID = 6.2 A, Rg = 9.1 , RD = 47 , see fig. 10b, c - - 8.3 - - 30 - 13 - - 18 - - 55 - - 20 - pF nC ns Fall Time tf Internal Source Inductance LS Between lead, and center of die contact - 7.5 - IS MOSFET symbol showing the integral reverse p - n junction diode - - 6.2 - - 25 - - 1.5 - 450 940 ns - 3.8 7.9 μC nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton D A G S TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRFBC40, SiHFBC40 data and test conditions. www.vishay.com 2 Document Number: 91116 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91116 S11-1053-Rev. C, 30-May-11 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91116 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % Fig. 9 - Maximum Drain Current vs. Case Temperature 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD Rg D.U.T + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91116 S11-1053-Rev. C, 30-May-11 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91116 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91116. Document Number: 91116 S11-1053-Rev. C, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Package Information Vishay Siliconix I2PAK (TO-262) (HIGH VOLTAGE) A (Datum A) E B c2 A E A L1 Seating plane D1 D C L2 C B B L A c 3 x b2 E1 A1 3xb Section A - A Base metal 2xe b1, b3 Plating 0.010 M A M B c1 c (b, b2) Lead tip Section B - B and C - C Scale: None MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380 A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 - b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420 b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 - b2 1.14 1.78 0.045 0.070 e b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065 c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146 c2 1.14 1.65 0.045 0.065 2.54 BSC 0.100 BSC ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Thermal pad contour optional within dimension E, L1, D1, and E1. 4. Dimension b1 and c1 apply to base metal only. Document Number: 91367 Revision: 27-Oct-08 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000
IRFBC40LPBF 价格&库存

很抱歉,暂时无法提供与“IRFBC40LPBF”相匹配的价格&库存,您可以联系我们找货

免费人工找货