IRFIB5N50LPBF

IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.67 RoHS COMPLIANT Qg (Max.) (nC) 45 Qgs (nC) 13 • Lower Gate Charge Results in Simpler Drive Reqirements Qgd (nC) 23 • Enhanced dV/dt Capabilities Offer Improved Ruggedness Configuration Single • Higher Gate Voltage Threshold Offers Improved Noise Immunity D TO-220 FULLPAK • Lead (Pb)-free APPLICATIONS G • Zero Voltage Switching SMPS • Telecom and Server Power Supplies G D S • Uninterruptible Power Supplies S • Motor Control Applications N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRFIB5N50LPbF SiHFIB5N50L-E3 Lead (Pb)-free ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 30 4.7 3.0 16 0.33 140 4.0 3.0 42 19 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 4.0 A, dV/dt = 19 V/ns, (see fig. 17). c. ISD ≤ 4.0 A, dI/dt ≤ 421 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 1 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthJC - 65 3.0 °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.43 - V/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Gate-Source Threshold Voltage Drain-Source On-State Resistance - 0.67 0.80 Ω gfs VDS = 50 V, ID = 2.4 A 2.8 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1000 - - 110 - RDS(on) Forward Transconductance ID = 2.4 Ab VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Coss eff. Effective Output Capacitance Effective Output Capacitance (Energy Related) Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Internal Gate Resistance RG Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 12 - 1360 - VDS = 400 V, f = 1.0 MHz - 31 - - 75 - - 55 - VGS = 0 V VDS = 0 V to 400 Vc Coss eff. (ER) Total Gate Charge - VDS = 1.0 V, f = 1.0 MHz VGS = 10 V ID = 4.0 A, VDS = 400 V, see fig. 7 and 16b f = 1 MHz, open drain td(on) tr td(off) VDD = 250 V, ID = 4.0 A, RG = 9.0 Ω, VGS = 10 V, see fig. 11a and 11bb tf - - 45 - - 13 23 - - - 2.0 - - 13 - - 17 - - 26 - - 10 - - - 4.7 - - 16 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD MOSFET symbol showing the integral reverse p - n junction diode D G TJ = 25 °C, IS = 4.0 A, VGS = 0 A S Vb - - 1.5 - 73 110 - 99 150 Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4.0 A, TJ = 125 °C, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IS = 4.0 A, TJ = 125 °C, dI/dt = 100 A/µsb - 200 310 - 360 540 IRRM TJ = 25 °C - 6.7 10 V ns nC Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Current A Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Forward Turn-On Time ton Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 10 BOTTOM 1 TJ = 150 10 I D, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 0.1 5.5V 0.01 °C TJ = 25 ° C 1 0.1 20µs PULSE WIDTH Tj = 25°C V DS= 50V 20µs PULSE WIDTH 0.001 0.01 0.1 1 10 5.0 100 6.0 Fig. 1 - Typical Output Characteristics 3.0 1 5.5V 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 9.0 I D = 4.0A 2.5 100 2.0 (Normalized) BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 8.0 Fig. 3 - Typical Transfer Characteristics 100 TOP 7.0 V GS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ° Tj, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix 12 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VDS = 400V VDS = 250V VDS = 100V 10 Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 10000 I D = 4.0A Ciss 1000 Coss 100 Crss 10 1 8 6 4 2 0 1 10 100 1000 0 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 10 100 9 8 I SD , Reverse Drain Current (A) Energy (µJ) 7 6 5 4 3 2 10 T J= 25 ° C TJ = 150 °C 1 1 V GS = 0 V 0 0.1 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 V SD,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS www.vishay.com 4 Fig. 8 - Typical Source-Drain Diode Forward Voltage Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) RD VDS VGS D.U.T. RG 10 + - VDD 10 V 100µsec Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 10msec 0.1 1 Fig. 11a - Switching Time Test Circuit 1msec Tc = 25°C Tj = 150°C Single Pulse 10 100 1000 VDS 90 % 10000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area 10 % VGS 5.0 t d(on) tr t d(off) t f 4.0 ID , Drain Current (A) Fig. 11b - Switching Time Waveforms 3.0 2.0 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig. 10 - Maximum Drain Current vs. Case Temperature (Z thJC ) 10 D = 0.50 1 Thermal Response 0.20 0.10 0.05 P DM 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 / t 2 J = P DM x Z thJC +TC 1 10 t 1, Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 5 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix VGS(th) Gate threshold Voltage (V) 6.0 V DS tp 5.0 ID = 250µA 4.0 I AS 3.0 Fig. 15b - Unclamped Inductive Waveforms 2.0 -75 -50 -25 0 25 50 75 100 125 QG 150 T J , Temperature ( °C ) 10 V QGS Fig. 13 - Threshold Voltage vs. Temperature VG 320 EAS , Single Pulse Avalanche Energy (mJ) ID TOP 1.8A BOTTOM 2.5A 4.0A Q GD Charge 240 Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 160 50 kΩ 12 V 80 0.2 µF 0.3 µF D.U.T. + V - DS 0 25 50 75 100 125 150 ( ° C) Starting Tj, Junction Temperature VGS 3 mA Fig. 14 - Maximum Avalanche Energy vs. Drain Current IG ID Current sampling resistors Fig. 16b - Gate Charge Test Circuit 15 V L VDS D.U.T RG IAS 20 V tp Driver + A - VDD A 0.01 Ω Fig. 15a - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 17 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91173. Document Number: 91173 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1