IRFIB6N60A
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Vishay Siliconix
Power MOSFET
FEATURES
D
TO-220 FULLPAK
• Low gate charge Qg results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
G
• Fully characterized capacitance and avalanche voltage
and current
G
D
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
N-Channel MOSFET
APPLICATIONS
• Switch mode power supply (SMPS)
PRODUCT SUMMARY
VDS (V)
• Uninterruptible power supply
600
RDS(on) (Ω)
VGS = 10 V
• High speed power switching
0.75
Qg max. (nC)
49
• High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
Qgs (nC)
13
Qgd (nC)
20
TYPICAL SMPS TOPOLOGIES
Configuration
• Single transistor forward
Single
• Active clamped forward
ORDERING INFORMATION
Package
TO-220 FULLPAK
Lead (Pb)-free
IRFIB6N60APbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
600
Gate-source voltage
VGS
± 30
Continuous drain current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
IDM
Linear derating factor
UNIT
V
5.5
3.5
37
0.48
W/°C
EAS
290
mJ
current a
IAR
9.2
A
Repetitive avalanche energy a
EAR
6.0
mJ
Single pulse avalanche energy b
Repetitive avalanche
Maximum power dissipation
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
PD
60
W
dV/dt
5.0
V/ns
TJ, Tstg
-55 to +150
For 10 s
300
M3 screw
0.6
°C
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0975-Rev. F, 11-Oct-2021
Document Number: 91175
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
65
Maximum junction-to-case (drain)
RthJC
-
2.1
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-ssource breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA d
-
660
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-source leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-source on-state resistance
Forward transconductance
μA
-
-
0.75
Ω
gfs
VDS = 25 V, ID = 5.5 A
5.5
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1400
-
-
180
-
-
7.1
-
VDS = 1.0 V, f = 1.0 MHz
-
1957
-
VDS = 480 V, f = 1.0 MHz
-
49
-
-
96
-
-
-
49
-
-
13
-
-
20
-
13
-
-
25
-
-
30
-
-
22
-
0.5
-
3.2
-
-
5.5
-
-
37
-
-
1.5
-
530
800
ns
-
3.0
4.4
μC
RDS(on)
ID = 3.3 A b
VGS = 10 V
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Effective output capacitance
Coss eff.
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
VGS = 0 V
tr
td(off)
Fall time
tf
Gate input resistance
Rg
VDS = 0 V to 480
VGS = 10 V
Vc
ID = 9.2 A, VDS = 400 V,
see fig. 6 and 13 b
VDD = 300 V, ID = 9.2 A,
RG = 9.1 Ω, RD = 35.5 Ω,
see fig. 10 b
f = 1 MHz, open drain
pF
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 9.2 A, VGS = 0 V b
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
d. t = 60 s, f = 60 Hz
S21-0975-Rev. F, 11-Oct-2021
Document Number: 91175
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
4.7V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
TJ = 25 ° C
1
0.1
4.0
100
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
10
4.7V
20µs PULSE WIDTH
TJ = 150 °C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
S21-0975-Rev. F, 11-Oct-2021
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
5.0
6.0
7.0
8.0
9.0
10.0
Fig. 3 - Typical Transfer Characteristics
TOP
1
V DS = 50V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
TJ = 150 ° C
ID = 9.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91175
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2400
100
ISD , Reverse Drain Current (A)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
2000
C, Capacitance (pF)
Vishay Siliconix
iss
1600
oss
1200
800
rss
400
0
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
A
1
10
100
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.0
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
ID = 9.2A
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 480V
VDS = 300V
VDS = 120V
16
100
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
0.7
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
20
V GS = 0 V
0.5
12
8
10us
10
100us
1ms
1
10ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0975-Rev. F, 11-Oct-2021
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91175
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Vishay Siliconix
RD
VDS
6.0
VGS
ID , Drain Current (A)
D.U.T.
RG
5.0
+
- VDD
10 V
4.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( °C)
t d(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
t d(off) t f
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
t1
0.02
t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0975-Rev. F, 11-Oct-2021
Document Number: 91175
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A
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Vishay Siliconix
V DS
tp
15 V
Driver
L
VDS
D.U.T.
RG
+
A
- VDD
IAS
20 V
tp
A
0.01 Ω
I AS
Fig. 12b - Unclamped Inductive Waveforms
EAS , Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
600
TOP
500
BOTTOM
ID
4.1A
5.8A
9.2A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
QG
50 kΩ
12 V
0.2 µF
0.3 µF
10 V
QGS
+
Q GD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
Fig. 13a - Basic Gate Charge Waveform
S21-0975-Rev. F, 11-Oct-2021
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91175
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Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91175.
S21-0975-Rev. F, 11-Oct-2021
Document Number: 91175
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Package Information
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Vishay Siliconix
TO-220 FULLPAK (High Voltage)
OPTION 1: FACILITY CODE = 9
A
F
G
Q1
E
D
ØR
A3
L1
3 x b2
3 x b1
Mold flash
bleeding
Q
L
Exposed Cu
3xb
2xe
C
Bottom view
MILLIMETERS
DIM.
MIN.
NOM.
A
4.60
4.70
4.80
b
0.70
0.80
0.91
b1
1.20
1.30
1.47
b2
1.10
1.20
1.30
C
0.45
0.50
0.63
D
15.80
15.87
15.97
e
MAX.
2.54 BSC
E
10.00
10.10
F
2.44
2.54
10.30
2.64
G
6.50
6.70
6.90
L
12.90
13.10
13.30
L1
3.13
3.23
3.33
Q
2.65
2.75
2.85
Q1
3.20
3.30
3.40
ØR
3.08
3.18
3.28
Notes
1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking
Revision: 08-Apr-2019
Document Number: 91359
1
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
OPTION 2: FACILITY CODE = Y
A
A1
E
ØP
n
d1
d3
D
u
L1
V
L
b3
A2
b2
c
b
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.570
4.830
0.180
0.190
A1
2.570
2.830
0.101
0.111
A2
2.510
2.850
0.099
0.112
b
0.622
0.890
0.024
0.035
b2
1.229
1.400
0.048
0.055
b3
1.229
1.400
0.048
0.055
c
0.440
0.629
0.017
0.025
D
8.650
9.800
0.341
0.386
d1
15.88
16.120
0.622
0.635
d3
12.300
12.920
0.484
0.509
E
10.360
10.630
0.408
e
2.54 BSC
0.419
0.100 BSC
L
13.200
13.730
0.520
0.541
L1
3.100
3.500
0.122
0.138
n
6.050
6.150
0.238
0.242
ØP
3.050
3.450
0.120
0.136
u
2.400
2.500
0.094
0.098
V
0.400
0.500
0.016
0.020
ECN: E19-0180-Rev. D, 08-Apr-2019
DWG: 5972
Notes
1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking
Revision: 08-Apr-2019
Document Number: 91359
2
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
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Document Number: 91000
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