IRFIB7N50LPBF

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration • Lower Gate Charge Results in Simpler Drive Reqirements COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness Single • Higher Gate Voltage Threshold Offers Improved Noise Immunity D TO-220 FULLPAK RoHS • Lead (Pb)-free APPLICATIONS G • • • • S G D S Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRFIB7N50LPbF SiHFIB7N50L-E3 Lead (Pb)-free ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb UNIT V 6.8 4.3 A 27 0.37 W/°C mJ EAS 550 Avalanche Currenta IAR 6.8 A Repetitive Avalanche Energya EAR 4.6 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 46 W dV/dt 24 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14). c. ISD ≤ 6.8 A, dI/dt ≤ 650 A/µs, VDD ≤ VDS, dV/dt = 24 V/ns, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 1 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 2.69 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.44 - V/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance - 0.32 0.38 Ω gfs VDS = 50 V, ID = 4.1 A 4.7 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2220 - - 230 - RDS(on) Forward Transconductance VGS = 10 V ID = 4.1 Ab Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Effective Output Capacitance (Energy Related) Coss eff. Qgs Gate-Drain Charge Qgd Internal Gate Resistance RG Rise Time Turn-Off Delay Time Fall Time 2780 - VDS = 400 V, f = 1.0 MHz - 63 - - 140 - - 100 - - - 92 - - 24 VDS = 0 V to 400 Vc Qg Gate-Source Charge Turn-On Delay Time 23 - VGS = 0 V Coss eff. (ER) Total Gate Charge - VDS = 1.0 V, f = 1.0 MHz VGS = 10 V ID = 6.8 A, VDS = 400 V, see fig. 7 and 16b f = 1 MHz, open drain td(on) tr td(off) tf VGS = 10 V VDD = 250 V, ID = 6.8 A, RG = 9.0 Ω, see fig. 11a and 11bb - - 44 - 0.88 - - 23 - - 36 - - 47 - - 19 - - - 6.8 - - 27 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD MOSFET symbol showing the integral reverse p - n junction diode TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb D G A S - - 1.5 - 85 130 - 130 200 Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 6.8 A, TJ = 125 °C, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IS = 6.8 A, TJ = 125 °C, dI/dt = 100 A/µsb - 280 420 - 570 860 IRRM TJ = 25 °C - 5.9 8.9 V ns nC Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Current A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 10 BOTTOM ID, Drain-to-Source Current (Α) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 5.0V 0.1 TJ = 150 °C 10 T J = 25 °C 1 VDS = 50 V ≤ 60 μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.01 0.1 0.1 1 10 100 3 V DS, Drain-to-Source Voltage (V) 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 5.0V 1 ≤60μs PULSE WIDTH Tj = 150°C 0.1 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 TOP ID, Drain-to-Source Current (A) 4 2.5 ID = 6.8A VGS = 10V 2.0 1.5 1.0 0.5 0.0 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 V DS, Drain-to-Source Voltage (V) T J , Junction Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 3 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 6.8A C oss = C ds + C gd 10000 C, Capacitance(pF) VGS, Gate-to-Source Voltage (V) C rss = C gd Ciss 1000 Coss 100 Crss VDS= 400V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 0 10 20 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 12 40 50 60 70 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 100.00 ISD, Reverse Drain Current (A) 10 8 Energy (μJ) 30 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 6 4 2 10.00 T J = 150°C 1.00 T J = 25°C 0.10 VGS = 0V 0 0.01 0 50 100 150 200 250 300 350 400 450 500 550 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS www.vishay.com 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix VDS ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY R (on) DS VGS D.U.T. RG 10 RD + - VDD 100μsec 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 Fig. 11a - Switching Time Test Circuit DC 0.1 1msec Tc = 25°C Tj = 150°C Single Pulse VDS 10msec 90 % 0.01 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area 10 % VGS t d(on) tr t d(off) t f Fig. 11b - Switching Time Waveforms 7 ID, Drain Current (A) 6 5 4 3 2 1 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig. 10 - Maximum Drain Current vs. Case Temperature Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 5 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 R1 R1 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ3 τ2 Ri (°C/W) 0.2965 τi (sec) 0.001144 0.9847 1.4118 0.151939 1.705500 τ3 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 2500 EAS , Single Pulse Avalanche Energy (mJ) VGS(th) Gate threshold Voltage (V) 5.0 4.0 ID = 250μA 3.0 2.0 1.0 ID 1.4A 1.7A BOTTOM 6.8A TOP 2000 1500 1000 500 0 -75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 T J , Temperature ( °C ) Starting T J , Junction Temperature (°C) Fig. 13 - Threshold Voltage vs. Temperature Fig. 14 - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix QG 15 V 10 V L VDS D.U.T RG + A - VDD IAS 20 V tp QGS Driver Q GD VG A 0.01 Ω Charge Fig. 15a - Unclamped Inductive Test Circuit Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 50 kΩ tp 12 V 0.2 µF 0.3 µF D.U.T. + V - DS VGS 3 mA I AS IG ID Current sampling resistors Fig. 15b - Unclamped Inductive Waveforms Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 Fig. 16b - Gate Charge Test Circuit www.vishay.com 7 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 17 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91177. www.vishay.com 8 Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1