IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
500
RDS(on) ()
VGS = 10 V
0.190
Qg (Max.) (nC)
150
Qgs (nC)
44
Qgd (nC)
72
Configuration
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
Single
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
G
• Uninterruptible Power Supplies
S
• Motor Control Applications
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFP23N50LPbF
Lead (Pb)-free
SiHFP23N50L-E3
IRFP23N50L
SnPb
SiHFP23N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
23
15
A
IDM
92
2.9
W/°C
Single Pulse Avalanche Energyb
EAS
410
mJ
Repetitive Avalanche Currenta
IAR
23
A
EAR
37
mJ
PD
370
W
dV/dt
21
V/ns
TJ, Tstg
- 55 to + 150
Linear Derating Factor
Repetitive Avalanche
Energya
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 650 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthCS
RthJC
0.24
-
40
0.34
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mAd
-
0.27
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = 500 V, VGS = 0 V
-
-
50
μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
2.0
mA
-
0.190
0.235
VDS = 50 V, ID = 14 Ab
12
-
-
S
ID = 14 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
3600
-
Output Capacitance
Coss
VDS = 25 V,
-
380
-
Crss
f = 1.0 MHz, see fig. 5
-
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Coss
Coss eff.
Coss eff. (ER)
RG
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V
tr
td(off)
-
37
VDS = 1.0 V , f = 1.0 MHz
-
4800
-
VDS = 400 V , f = 1.0 MHz
-
100
-
VDS = 0 V to 400 Vc
-
220
-
Vd
-
160
-
-
1.2
-
-
-
150
VDS = 0 V to 400
f = 1 MHz, open drain
VGS = 10 V
ID = 23 A, VDS = 400 V
see fig. 6 and 13b
VDD = 250 V, ID = 23 A
Rg = 6.0, VGS = 10 V
see fig. 10b
tf
-
-
44
-
-
72
-
26
-
-
94
-
-
53
-
-
45
-
-
-
23
-
-
92
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
trr
Qrr
IRRM
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 23 A,
dI/dt = 100 A/μsb
TJ =1 25 °C
TJ = 25 °C
-
-
1.5
-
170
250
-
220
330
-
560
840
-
980
1500
-
7.6
11
V
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % to 80 % VDS.
d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 % to 80 % VDS.
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Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
1000.00
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
ID, Drain-to Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
4.5 V
0.01
TJ = 25 °C
100.00
TJ = 150 °C
10.00
20 µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25 °C
0.001
TJ = 150°C
1.00
0.1
1
10
100
1.0
6.0
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
RDS(ON), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
16.0
Fig. 3 - Typical Transfer Characteristics
ID = 23 A
TOP
10
11.0
VGS, Gate-to-Source Voltage (V)
1
4,5 V
20µs PULSE WIDTH
Tj = 150 °C
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
0.1
0.0
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
100
-60
-40
-20
0
20
40
60
TJ, Junction Temperature
80
100
120 140
160
(°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
1000
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
ID, Drain Current (A)
C, Capacitance (pF)
100000
Ciss
1000
Coss
100
10us
100us
10
100
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
Crss
10
1
1
10
100
1000
1000
100
10
10000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Maximum Safe Operating Area
25
VGS, Gate-to-Source Voltage (V)
12
20
Energy (µJ)
10ms
15
10
5
0
ID = 23
VDS = 400 V
VDS = 250 V
VDS = 100 V
10
7
5
2
0
0
100
200
300
400
500
600
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
0
24
48
72
96
120
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100.00
RD
ISD, Reverse Drain Current (A)
VDS
VGS
TJ = 150 °C
D.U.T.
RG
10.00
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
TJ = 25 °C
1.00
Fig. 11a - Switching Time Test Circuit
VGS = 0 V
VDS
0.10
1.5
1.0
0.5
0.0
90 %
2.0
VSD, Source-to-Drain Voltage (V)
Fig. 9 - Typical Source-Drain Diode Forward Voltage
10 %
VGS
25
td(on)
td(off) tf
tr
ID, Drain Current (A)
20
Fig. 11b - Switching Time Waveforms
15
10
5
0
25
50
75
100
TC, Case Temperature
125
150
(°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
(Z thJC)
10
1
Thermal Response
D = 0.50
0.1
0.20
0.10
PDM
0.05
0.01
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
t1 / t2
2. PeakT
J = P DM x Z thJC + T C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
VDS
VGS(th) Gate Threshold Voltage (V)
5.0
tp
4.5
4.0
ID = 250 µA
3.5
3.0
IAS
2.5
Fig. 15b - Unclamped Inductive Waveforms
2.0
1.5
Current regulator
Same type as D.U.T.
1.0
- 75 - 50 - 25
0
25
50
75
100
125 150
50 kΩ
TJ, Temperature (°C)
12 V
0.2 µF
Fig. 13 - Threshold Voltage vs. Temperature
0.3 µF
+
D.U.T.
EAS, Single Pulse Avalanche Energy (mJ)
750
ID
10A
15A
BOTTOM 23A
VDS
VGS
TOP
600
-
3 mA
IG
ID
Current sampling resistors
450
Fig. 16a - Gate Charge Test Circuit
300
150
QG
10 V
0
50
25
75
150
125
100
Starting T , Junction Temperature
QGS
(°C)
Fig. 14 - Maximum Avalanche Energy s. Drain Current
QGD
VG
Charge
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
Fig. 16b - Basic Gate Charge Waveform
Driver
+
- VDD
A
0.01Ω
Fig. 15a - Unclamped Inductive Test Circuit
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Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 17 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91209.
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
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Document Number: 91000
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