IRFP264NPBF

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer with an ectremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP264NPbF SiHFP264N-E3 IRFP264N SiHFP264N Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 250 ± 20 44 31 170 2.6 520 25 38 380 8.7 - 55 to + 175 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 25 A, VGS = 10 V (see fig. 12). c. ISD ≤ 25 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91216 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1 IRFP264N, SiHFP264N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.39 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 µA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 25 Ab VGS = 10 V VDS = 25 V, ID = 25 Ab µA - - 0.060 Ω 29 - - S - 3860 - - 480 - - 110 - - - 210 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 34 Gate-Drain Charge Qgd - - 94 Turn-On Delay Time td(on) - 17 - tr - 62 - - 52 - - 53 - - 5.0 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 25 A, VDS = 200 V, see fig. 6 and 13 VDD = 30 V, ID = 25 A , RG = 1.8 Ω, VGS = 10 V, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G - 13 - - - 44 - - 170 S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 25 A, VGS = 0 S Vb TJ = 25 °C, IF = 25 A, dI/dt = 100 A/µsb - - 1.3 V - 270 400 ns - 2.7 4.1 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91216 S-81274-Rev. A, 16-Jun-08 IRFP264N, SiHFP264N Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) 100 10 4.5V 1 10 TJ = 175 ° C 10 1 4.0 100 V DS = 50V 20μs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) 100 20μs PULSE WIDTH TJ = 25 °C 1 0.1 1000 TJ = 25 ° C 100 4.5V 10 20μs PULSE WIDTH TJ = 175 ° C 1 1 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TOP 10.0 ID = 42A 3.0 2.0 1.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91216 S-81274-Rev. A, 16-Jun-08 www.vishay.com 3 IRFP264N, SiHFP264N Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 6000 1000 ISD , Reverse Drain Current (A) 8000 100 Ciss 4000 Coss 2000 Crss 0 1 10 100 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) VGS , Gate-to-Source Voltage (V) 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 80 120 160 200 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 TJ = 25 ° C OPERATION IN THIS AREA LIMITED BY R DS(on) VDS = 200V VDS = 125V VDS = 50V 40 1 1000 ID = 25A 0 10 0.1 0.2 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 TJ = 175 ° C 100 100μsec 10 1msec 1 0.1 10msec Tc = 25°C Tj = 175°C Single Pulse 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91216 S-81274-Rev. A, 16-Jun-08 IRFP264N, SiHFP264N Vishay Siliconix RD VDS 50 VGS D.U.T. RG + - VDD ID , Drain Current (A) 40 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 30 Fig. 10a - Switching Time Test Circuit 20 VDS 90 % 10 0 25 50 75 100 125 150 175 10 % VGS TC , Case Temperature ( °C) td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91216 S-81274-Rev. A, 16-Jun-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFP264N, SiHFP264N Vishay Siliconix EAS , Single Pulse Avalanche Energy (mJ) 1000 ID 10A 18A 25A TOP 800 BOTTOM 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91216 S-81274-Rev. A, 16-Jun-08 IRFP264N, SiHFP264N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by R G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91216. Document Number: 91216 S-81274-Rev. A, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1