IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
600
RDS(on) ()
VGS = 10 V
0.18
Qg (Max.) (nC)
180
Qgs (nC)
56
Qgd (nC)
86
Configuration
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Enhanced Body Diode dV/dt Capability
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Hard Switching Primary or PFC Switch
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
• High Speed Power Switching
D
S
G
• Motor Drive
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFP27N60KPbF
Lead (Pb)-free
SiHFP27N60K-E3
IRFP27N60K
SnPb
SiHFP27N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
27
18
A
IDM
110
4.0
W/°C
EAS
530
mJ
Currenta
IAR
27
A
Repetitive Avalanche Energya
EAR
50
mJ
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
500
W
dV/dt
13
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.4 mH, Rg = 25 , IAS = 27 A, dV/dt = 13 V/ns (see fig. 12).
c. ISD 27 A, dI/dt 390 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.29
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
640
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
50
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
0.18
0.22
gfs
VDS = 50 V, ID = 16 A
14
-
-
S
Input Capacitance
Ciss
VGS = 0 V
-
4660
-
Output Capacitance
Coss
VDS = 25 V
-
460
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = 16 Ab
VGS = 10 V
Dynamic
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Coss
Coss eff.
-
41
-
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
-
5490
-
VGS = 0 V
VDS = 480 V , f = 1.0 MHz
-
120
-
VGS = 0 V
VDS = 0 V to 480 V
-
250
-
-
-
180
-
-
56
Qg
VGS = 10 V
ID = 27 A, VDS = 480 V
pF
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
86
Turn-On Delay Time
td(on)
-
27
-
-
110
-
-
43
-
-
38
-
-
-
27
-
-
110
-
-
1.5
-
620
920
ns
-
11
16
μC
-
36
53
A
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
see fig. 6 and 13b
VDD = 300 V, ID = 27 A
Rg = 4.3 , VGS = 10 V, see fig.
10b
tf
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
Forward Turn-On Time
IRRM
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 27 A, VGS = 0 Vb
TJ = 25 °C, IF = 27 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
www.vishay.com
2
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000.00
100
10
ID, Drain-to-Source Current (Α )
ID, Drain-to-Source Current (A)
TOP
T J = 150°C
100.00
1
0.1
5.0V
0.01
10.00
1.00
T J = 25°C
0.10
20µs PULSE WIDTH
Tj = 25°C
VDS = 100V
20µs PULSE WIDTH
0.001
0.01
0.1
1
10
5.0
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
7.0
9.0
11.0
13.0
15.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.5
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
I D = 28A
5.0V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
100
2.5
(Normalized)
10
3.0
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
TOP
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
100000
Coss = Cds + Cgd
100
I SD , Reverse Drain Current (A)
10000
C, Capacitance(pF)
1000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
1000
Coss
100
Crss
10
T J= 150 ° C
T J= 25 ° C
1
V GS = 0 V
10
1
10
100
0.1
1000
0.2
ID = 28A
0.8
1.1
1.4
V SD,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
VDS = 480V
VDS = 300V
VDS = 120V
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
12
0.5
10
VGS , Gate-to-Source Voltage (V)
100
7
5
2
10
100µsec
1msec
1
0.1
0
0
30
60
90
120
150
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Tc = 25°C
Tj = 150°C
Single Pulse
10
10msec
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
RD
VDS
30
VGS
ID , Drain Current (A)
D.U.T.
RG
25
+
- VDD
10 V
20
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
15
Fig. 10a - Switching Time Test Circuit
10
VDS
90 %
5
0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature (°C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
(Z thJC )
1
D = 0.50
0.1
Thermal Response
0.20
0.10
0.05
P DM
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+TC
0.1
1
t 1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
VDS
tp
15 V
Driver
L
VDS
D.U.T
RG
+
A
- VDD
IAS
20 V
tp
A
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
950
ID
13A
18A
28A
TOP
EAS , Single Pulse Avalanche Energy (mJ)
760
BOTTOM
570
380
190
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91219.
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
工商网监
湘ICP备2023018690号
