IRFP450N, SiHFP450N
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free
500
RDS(on) (Max.) (Ω)
VGS = 10 V
0.37
Qg (Max.) (nC)
77
Qgs (nC)
26
Qgd (nC)
34
Configuration
Single
RoHS
COMPLIANT
D
APPLICATIONS
TO-247
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
G
TYPICAL SMPS TOPOLOGIES
S
D
G
• Two Transistor Forward
• Half Bridge and Full Bridge
• PFC Boost
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP450NPbF
SiHFP450N-E3
IRFP450N
SiHFP450N
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
VGS at 10 V
TC = 25 °C
TC = 100 °C
SYMBOL
LIMIT
VDS
VGS
500
± 30
14
8.8
56
1.6
170
14
20
200
5.0
- 55 to + 150
300d
10
1.1
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
1.6 mm from case.
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
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IRFP450N, SiHFP450N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.64
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.59
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
0.37
Ω
VDS = 50 V, ID = 8.4 A
7.9
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
2260
-
-
210
-
ID = 8.4 Ab
VGS = 10 V
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Coss
VGS = 0 V
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
-
14
-
VDS = 1.0 V, f = 1.0 MHz
-
2410
-
VDS = 400 V, f = 1.0 MHz
-
59
-
VDS = 0 V to 400 Vc
-
110
-
-
-
77
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
-
-
26
Gate-Drain Charge
Qgd
-
-
34
Turn-On Delay Time
td(on)
-
20
-
-
63
-
-
29
-
-
25
-
-
-
14
-
-
56
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 250 V, ID = 14 A
RG = 6.2 Ω,VGS = 10 V,
see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 14 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
-
-
1.4
V
-
430
650
ns
-
3.7
5.6
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
IRFP450N, SiHFP450N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
I D , Drain-to-Source Current (A)
10
1
6.0V
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
100
1
10
10
TJ = 25 ° C
1
V DS = 50V
20μs PULSE WIDTH
7.0
8.0
9.0
VDS , Drain-to-Source Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
3.0
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
I D , Drain-to-Source Current (A)
TJ = 150 ° C
0.1
6.0
10
10
6.0V
20μs PULSE WIDTH
TJ = 150 ° C
1
1
10
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TOP
10.0
ID = 14A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
VDS , Drain-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
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IRFP450N, SiHFP450N
Vishay Siliconix
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
10000
Coss = Cds + Cgd
Ciss
1000
Coss
100
10
Crss
100
ISD , Reverse Drain Current (A)
100000
1
1
10
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
1000
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
20
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID = 14A
VDS = 400V
VDS = 250V
VDS = 100V
16
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
V GS = 0 V
0.4
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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100
10
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
IRFP450N, SiHFP450N
Vishay Siliconix
14
VGS
12
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
10
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
8
Fig. 10a - Switching Time Test Circuit
6
VDS
4
90 %
2
0
25
50
75
100
125
10 %
VGS
150
TC , Case Temperature ( ° C)
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 9 - Maximum Drain Current vs. Case Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
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IRFP450N, SiHFP450N
Vishay Siliconix
VDS
15 V
tp
Driver
L
VDS
D.U.T.
RG
+
A
- VDD
IAS
20 V
tp
A
IAS
0.01 Ω
EAS , Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
300
ID
6.3A
8.9A
14A
TOP
250
BOTTOM
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
IRFP450N, SiHFP450N
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91232.
Document Number: 91232
S09-0006-Rev. B, 19-Jan-09
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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