IRFP460HPBF
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Power MOSFET
FEATURES
D
• Low figure-of-merit (FOM) Ron x Qg
TO-247AC
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
G
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
S
D
S
G
APPLICATIONS
N-Channel MOSFET
•
•
•
•
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
550
VGS = 10 V
Qg max. (nC)
0.234
116
Qgs (nC)
22
Qgd (nC)
35
Configuration
Single
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free and halogen-free
IRFP460HPBF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
500
Gate-source voltage
VGS
± 30
Continuous drain current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
TJ = 125 °C
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
For 10 s
V
20
13
A
IDM
54
2.6
W/°C
EAS
621
mJ
Linear derating factor
Single pulse avalanche energy b
UNIT
PD
329
W
TJ, Tstg
-55 to +150
°C
dv/dt
66
0.5
260
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 4.3 mH, Rg = 25 , IAS = 17 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
S22-0722-Rev. A, 22-Aug-2022
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
40
Maximum junction-to-case (drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.56
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 500 V, VGS = 0 V
-
-
1
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
100
Gate-source leakage
IGSS
Zero gate voltage drain current
IDSS
μA
-
0.234
0.270
gfs
VDS = 10 V, ID = 12 A
-
9.6
-
S
Input capacitance
Ciss
3208
-
Coss
-
163
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output capacitance
-
17
-
Effective output capacitance, energy
related a
Co(er)
-
114
-
Effective output capacitance, time
related b
Co(tr)
-
206
-
Drain-source on-state resistance
Forward transconductance a
RDS(on)
VGS = 10 V
ID = 12 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Qg
Gate-source charge
Qgs
VGS = 10 V
ID = 12 A, VDS = 400 V
-
77
116
-
22
-
Gate-drain charge
Qgd
-
35
-
Turn-on delay time
td(on)
-
29
58
VDD = 400 V, ID = 12 A,
VGS = 10 V, Rg = 9.1
-
60
90
-
67
101
-
47
94
f = 1 MHz, open drain
0.37
0.75
1.5
-
-
22
-
-
54
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current
ISM
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRRM
S22-0722-Rev. A, 22-Aug-2022
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 12 A, VGS = 0 V
TJ = 25 °C, IF = IS = 12 A,
di/dt = 100 A/μs, VR = 25 V
S
-
-
1.2
V
-
384
768
ns
-
5.1
10.2
μC
-
26
-
A
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
3.0
TJ = 25 °C
9V
30
1000
8V
100
15
7V
6V
5V
0
0
5
10
15
2.5
2.0
1000
1.5
VGS = 10 V
1.0
100
0.5
10
10
0
20
-60 -40 -20 0
20 40 60 80 100 120 140 160
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
Axis Title
TJ = 150 °C
10 000
1000
8V
20
7V
100
10
Ciss
2nd line
C - Capacitance (pF)
30
1000
1000
Coss
100
100
6V
5V
10
15
10
1
10
5
Crss
10
0
0
VGS = 0 V, f = 1MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1st line
2nd line
15 V
14 V
13 V
12 V
11 V
10 V
10000
100 000
10000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
40
0
20
100
200
300
400
500
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Axis Title
Axis Title
60
10 0000
10000
20
2nd line
Coss - Output Capacitance (pF)
10 000
45
1000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
TJ = 25 °C
30
TJ = 150 °C
100
15
15
Eoss
Coss
1000
10
100
5
VDS = 17 V
10
0
0
5
10
15
20
10
0
0
100
200
300
400
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S22-0722-Rev. A, 22-Aug-2022
Eoss - Output Capacitance Stored Energy (µJ)
2nd line
45
10000
ID =12 A
1st line
2nd line
15 V
14 V
13 V
12 V
11 V
10 V
RDS(on) - Drain-to-Source On-Resistance
(Normalized)
10000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
60
500
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Axis Title
Axis Title
24
9
1000
6
100
3
10
0
0
25
50
75
10000
18
1000
1st line
2nd line
VDS = 400 V
VDS = 250 V
VDS = 100 V
2nd line
ID - Drain Current (A)
10000
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
12
12
100
6
0
100
10
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TC - Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
10
1000
TJ = 25 °C
100
VGS = 0 V
10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.2
10000
1.1
1000
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
ISD - Reverse Drain Current (A)
10000
VDS - Drain-to-Source Breakdown Voltage (V)
(Normalized)
Axis Title
100
1.0
100
0.9
ID = 250 uA
10
0.8
-60 -40 -20 0
1.4
20 40 60 80 100 120 140 160
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title
10000
1000
Operation in this area
limited by RDS(on)
IDM limited
1000
Limited by RDS(on) a
10
100 µs
1 ms
1
10 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
0.1
BVDSS limited
TC = 25 °C,
TJ = 150 °C,
single pulse
0.01
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
S22-0722-Rev. A, 22-Aug-2022
Document Number: 92440
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Axis Title
1
10000
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.1
0.05
100
0.02
Single pulse
10
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
- VDD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
10 %
VGS
Qgd
VG
td(on)
td(off)
tr
tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
D.U.T.
Rg
+
- VDD
12 V
0.2 μF
0.3 μF
+
IAS
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
S22-0722-Rev. A, 22-Aug-2022
IG
ID
Current sampling resistors
Document Number: 92440
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Fig. 18 - Gate Charge Test Circuit
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dv/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
di/dt
waveform
Diode recovery
dv/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
S22-0722-Rev. A, 22-Aug-2022
Document Number: 92440
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92440.
S22-0722-Rev. A, 22-Aug-2022
Document Number: 92440
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Package Information
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TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
MILLIMETERS
DIM.
MIN.
NOM.
MAX.
A
4.83
5.02
A1
2.29
A2
b
DIM.
MIN.
NOM.
MAX.
NOTES
5.21
D1
16.46
16.76
17.06
5
2.41
2.55
D2
0.56
0.66
0.76
1.17
1.27
1.37
E
15.50
15.70
15.87
1.12
1.20
1.33
E1
13.46
14.02
14.16
5
b1
1.12
1.20
1.28
E2
4.52
4.91
5.49
3
b2
1.91
2.00
2.39
b3
1.91
2.00
2.34
b4
2.87
3.00
3.22
b5
2.87
3.00
3.18
c
0.40
0.50
0.60
c1
0.40
0.50
0.56
D
20.40
20.55
20.70
NOTES
4
6
e
L
14.90
15.15
15.40
6, 8
L1
3.96
4.06
4.16
6
ØP
3.56
3.61
3.65
7
6
Ø P1
Q
4
5.46 BSC
S
7.19 ref.
5.31
5.50
5.69
5.51 BSC
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 31-Oct-2022
Document Number: 91360
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VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
NOTES
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
0.254
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
c1
0.38
0.76
R
4.52
D
19.71
20.82
S
D1
13.08
-
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 31-Oct-2022
Document Number: 91360
2
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VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 31-Oct-2022
Document Number: 91360
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
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Document Number: 91000
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