IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current 71 Configuration Available Single • Effective Coss Specified D • Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supply S • High Speed Power Switching D G S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET • Full Bridge Converters • Power Factor Correction Boost ORDERING INFORMATION Package Super-247 IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 36 23 A IDM 144 3.6 W/°C Single Pulse Avalanche Energyb EAS 1260 mJ Repetitive Avalanche Currenta IAR 36 A Repetitive Avalanche Energya EAR 44 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 446 W dV/dt 3.5 V/ns TJ, Tstg - 55 to + 150 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, Rg = 25 , IAS = 36 A (see fig. 12). c. ISD  36 A, dI/dt  145 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 www.vishay.com 1 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.28 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 250 μA 2.0 - - V - 4.0 V nA Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.13  20 - - S - 5579 - - 810 - - 36 - VDS = 1.0 V , f = 1.0 MHz - 7905 - VDS = 400 V , f = 1.0 MHz - 221 - - 400 - - - 180 ID = 22 Ab VGS = 10 V VDS = 50 V, ID = 22 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-Off Delay Time Fall Time VGS = 0 V Coss eff. Total Gate Charge Rise Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) VDS = 0 V to 400 V VGS = 10 V ID = 36 A, VDS = 400 V, see fig. 6 and 13b VDD = 250 V, ID = 36 A, RG = 2.15 , RD = 7.0 see fig. 10b tf - - 46 - - 71 - 23 - - 98 - - 52 - - 80 - - - 36 - - 144 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 36 A, VGS = 0 Vb TJ = 25 °C, IF = 36 A, dI/dt = 100 A/μsb - - 1.5 V - 570 860 ns - 8.6 13 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) 100 10 4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 100 1 10 I D , Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C 10 100 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1 0.1 100 1 4.0 20µs PULSE WIDTH TJ = 150 ° C 1 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TOP 9.0 ID = 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix 1000 V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 100000 10000 100 C iss 1000 C oss 100 TJ = 150 ° C 10 TJ = 25 ° C 1 Crss 10 A 1 10 100 0.1 0.2 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 36A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 400V VDS = 250V VDS = 100V 16 ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 10us 100 12 8 100us 10 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 1ms 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix RD VDS 40 VGS D.U.T. ID , Drain Current (A) RG + - VDD 30 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 Fig. 10a - Switching Time Test Circuit VDS 10 90 % 0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 www.vishay.com 5 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix V DSav , Avalanche Voltage (V) 580 15 V Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 560 540 520 500 A 0 VDS 10 20 30 40 I av , Avalanche Current (A) tp Fig. 12d - Maximum Avalanche Energy vs. Drain Current IAS QG 10 V Fig. 12b - Unclamped Inductive Waveforms QGS EAS , Single Pulse Avalanche Energy (mJ) 3000 TOP 2500 BOTTOM ID 16A 23A 36A QGD VG Charge 2000 Fig. 13a - Basic Gate Charge Waveform 1500 1000 Current regulator Same type as D.U.T. 500 50 kΩ 12 V 0.2 µF 0.3 µF 0 25 50 75 100 125 150 + Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91258. Document Number: 91258 S11-0111-Rev. C, 07-Feb-11 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-274AA (High Voltage) B A E E4 A D2 E1 A1 R D1 D L1 L Detail “A” C b e A2 0.10 (0.25) M B A M 10° b4 b2 Lead Tip 5° Detail “A” Scale: 2:1 MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634 A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051 A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634 13.30 13.90 0.524 0.547 b 1.30 1.60 0.051 0.063 E1 b2 1.80 2.20 0.071 0.087 e 5.45 BSC 0.215 BSC b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579 c (1) 0.38 0.89 0.015 0.035 L1 1.00 1.60 0.039 0.063 D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118 ECN: X17-0056-Rev. B, 27-Mar-17 DWG: 5975 Notes • Dimensioning and tolerancing per ASME Y14.5M-1994 • Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body • Outline conforms to JEDEC® outline to TO-274AA (1) Dimension measured at tip of lead Revision: 27-Mar-17 Document Number: 91365 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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