IRFZ48R
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
•
•
•
•
•
•
•
Advanced process technology
Available
Ultra low on-resistance
Dynamic dV/dt rating
Available
175 °C operating temperature
Fast switching
Fully avalanche rated
Drop in replacement of the SiHFZ48 for linear / audio
applications
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-220AB
G
G
D
S
S
N-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
VGS = 10 V
0.018
Qg (Max.) (nC)
110
Qgs (nC)
29
Qgd (nC)
36
Configuration
DESCRIPTION
Advanced power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Single
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
IRFZ48RPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
VGS at 10 V
TC = 25 °C
TC = 100 °C
current a
Pulsed drain
Linear derating factor
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
Maximum power dissipation
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
SYMBOL
LIMIT
VDS
VGS
60
± 20
50
50
290
1.3
100
50
19
190
4.5
-55 to +175
300 d
10
1.1
ID
IDM
TC = 25 °C
For 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12)
c. ISD ≤ 72 A, dV/dt ≤ 200 A/ms, VDD ≤ VDS, TJ £ 175 °C
d. 1.6 mm from case
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91295
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
0.8
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.060
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
nA
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
VGS = ± 20
-
-
± 100
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
ID = 43 Ab
-
-
0.018
Ω
Ab
27
-
-
S
IGSS
IDSS
RDS(on)
gfs
VGS = 10 V
VDS = 25 V, ID = 43
μA
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b
-
2400
-
-
1300
-
-
190
-
-
-
110
-
-
29
Gate-drain charge
Qgd
-
-
36
Turn-on delay time
td(on)
-
8.1
-
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Internal drain inductance
LD
Internal source inductance
LS
VDD = 30 V, ID = 72 A,
Rg = 9.1 Ω, RD = 0.34 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
250
-
-
210
-
-
250
-
-
4.5
-
-
7.5
-
-
-
50
-
-
290
-
-
2.0
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb
V
-
120
180
ns
-
0.50
0.80
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91295
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 3 - Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig. 1 - Typical Output Characteristics
2.5
ID = 72A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig. 2 - Typical Output Characteristics
S21-0340-Rev. C, 12-Apr-2021
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91295
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
10us
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0340-Rev. C, 12-Apr-2021
Fig. 8 - Maximum Safe Operating Area
Document Number: 91295
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Vishay Siliconix
RD
VDS
VGS
80
LIMITED BY PACKAGE
ID , Drain Current (A)
D.U.T.
RG
+
- VDD
10 V
60
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
40
VDS
20
90 %
0
25
50
75
100
125
150
175
10 %
VGS
TC , Case Temperature ( ° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91295
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
IAS
EAS , Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
250
ID
29A
51A
BOTTOM 72A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature ( ° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
+
QGD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S21-0340-Rev. C, 12-Apr-2021
Fig. 13b - Gate Charge Test Circuit
Document Number: 91295
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48R
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91295.
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91295
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
