IRFZ48RS, SiHFZ48RS
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
•
•
•
•
•
•
Advanced process technology
Dynamic dV/dt
Available
175 °C operating temperature
Fast switching
Available
Fully avalanche rated
Drop in replacement of the IRFZ48, SiHFZ48 for
linear / audio applications
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D2PAK (TO-263)
G
G D
S
S
N-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
VGS = 10 V
0.018
Qg (Max.) (nC)
110
Qgs (nC)
29
Qgd (nC)
Configuration
DESCRIPTION
Advanced power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface-mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
36
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHFZ48RS-GE3
IRFZ48RSPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
Mounting Torque
SYMBOL
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
For 10 s
6-32 or M3 screw
EAS
PD
dV/dt
TJ, Tstg
LIMIT
60
± 20
50
50
290
1.3
100
190
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12)
c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A)
S21-0932-Rev. D, 13-Sep-2021
Document Number: 91296
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.8
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = 250 μA
MIN.
TYP.
MAX.
UNIT
60
-
-
V
-
0.60
-
V/°C
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS/TJ
Reference to 25 °C, ID = 1
mAc
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 43 Ab
VGS = 10 V
VDS = 25 V, ID = 43 Ab
μA
-
-
0.018
27
-
-
S
-
2400
-
-
1300
-
-
190
-
-
-
110
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
Gate-Source Charge
Qgs
-
-
29
Gate-Drain Charge
Qgd
-
-
36
Turn-On Delay Time
td(on)
-
8.1
-
tr
-
250
-
-
210
-
-
250
-
-
4.5
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 10 V
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b, c
VDD = 30 V, ID = 72 A,
Rg = 9.1 , RD = 0.34 , see fig. 10b, c
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
50c
-
-
290
-
-
2.0
V
-
120
180
ns
-
0.50
0.80
μC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
c. Current limited by the package, (die current = 72 A)
S21-0932-Rev. D, 13-Sep-2021
Document Number: 91296
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 2 - Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig. 1 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
2.5
ID = 72A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig. 3 - Normalized On-Resistance vs. Temperature
S21-0932-Rev. D, 13-Sep-2021
Document Number: 91296
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage
Vishay Siliconix
Fig. 6 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
10us
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0932-Rev. D, 13-Sep-2021
Fig. 7 - Maximum Safe Operating Area
Document Number: 91296
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
Vishay Siliconix
80
RD
VDS
LIMITED BY PACKAGE
ID , Drain Current (A)
VGS
D.U.T.
Rg
+
- VDD
60
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
40
Fig. 10a - Switching Time Test Circuit
VDS
20
90 %
0
25
50
75
100
125
150
175
10 %
VGS
TC , Case Temperature ( ° C)
td(on)
Fig. 8 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
Rg
D.U.T.
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S21-0932-Rev. D, 13-Sep-2021
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91296
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
EAS , Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
250
ID
29A
51A
BOTTOM 72A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature ( ° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
S21-0932-Rev. D, 13-Sep-2021
Fig. 13b - Gate Charge Test Circuit
Document Number: 91296
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, SiHFZ48RS
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 10 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91296.
S21-0932-Rev. D, 13-Sep-2021
Document Number: 91296
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
(Datum A)
E
B
c2
A
E
A
L1
Seating
plane
D1
D
C
L2
C
B
B
L
A
c
3 x b2
E1
A1
3xb
Section A - A
Base
metal
2xe
b1, b3
Plating
0.010 M A M B
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D
8.38
9.65
0.330
0.380
A1
2.03
3.02
0.080
0.119
D1
6.86
-
0.270
-
b
0.51
0.99
0.020
0.039
E
9.65
10.67
0.380
0.420
b1
0.51
0.89
0.020
0.035
E1
6.22
-
0.245
-
b2
1.14
1.78
0.045
0.070
e
b3
1.14
1.73
0.045
0.068
L
13.46
14.10
0.530
0.555
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.065
c1
0.38
0.58
0.015
0.023
L2
3.56
3.71
0.140
0.146
c2
1.14
1.65
0.045
0.065
2.54 BSC
0.100 BSC
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
www.vishay.com
1
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
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