K103K15X7RF5TH5V

2015 Super 12 Products SiHP33N60EF / EF Series High-Voltage MOSFETs SiHP33N60EF / EF Series HV Fast Body Diode Power MOSFET Offers up to 10x Reduction in Qrr  Features: • Based on E Series Super Junction technology • Fast body diode provides as much as 10x reduction in Qrr over the standard E Series MOSFET for lifetime control • Designed and developed for soft-switching topologies along with similar standard E Series on-resistance values – Scales of economy can be achieved within a system using EF Series throughout the design (in place of standard E Series MOSFETs with similar on-resistance) in the hardswitched topology • 600 V, 33 A maximum, RDS(on) max of 98 mΩ • 28 A maximum, RDS(on) max of 123 mΩ option also available (SiHx28N60EF) • Package options include TO-220, TO-263 (D2PAK), and TO247AC 2/24/2015 2 SiHP33N60EF / EF Series  Applications / Market Segments: • Hard- and soft-switching (focus) topologies ― Zero voltage switching (ZVS) and LLC converters • Applications ― Renewable energy: PV inverters ― Industrial: battery chargers ― Telecom: servers ― Computing: ATX / silver box SMPS   Datasheet document number: 91592 Product page: www.vishay.com/ppg?91592 2/24/2015 3 SiHP33N60EF / EF Series  Competition: • Infineon: CoolMOS (CFD) • ST: FDmesh II (Fast body diode MOSFETs) • Fairchild: FRFET • Toshiba: DTMOSIV (HSD)  Why use SiHP33N60EF / EF Series? • We offer similar on-resistance to our standard E Series MOSFETs and can provide economies of scale where a customer can use EF MOSFETs in hard-switched topologies as well, and will achieve similar efficiency to using a standard E Series MOSFET • The competition sees 5 % to 7 % increase in on-resistance from standard MOSFET to fast body diode MOSFET 2/24/2015 4 SiHP33N60EF / EF Series  Contact: • Philip Zuk (Philip.Zuk@vishay.com) 2/24/2015 5