KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
Single-Phase Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
e4
• High surge current capability
• High case dielectric strength of 1500 VRMS
~
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case Style KBU
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Package
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances applications.
KBU
IF(AV)
4A
VRRM
50 V, 100, V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
200 A
IR
5 μA
VF at IF = 4 A
1.0 V
TJ max.
150 °C
Diode variations
In-Line
MECHANICAL DATA
Case: KBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated
J-STD-002 and JESD22-B102
leads,
solderable
per
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL KBU4A
KBU4B
KBU4D KBU4G
KBU4J
KBU4K KBU4M UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
Maximum DC blocking voltage
Maximum average forward
rectified output current at
TC = 100 °C (1)
TA = 30 °C (2)
Peak forward surge current single sine-wave
superimposed on rated load
Operating junction and storage temperature range
4.0
IF(AV)
A
4.0
IFSM
200
A
TJ, TSTG
- 50 to + 150
°C
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward drop per diode
Maximum DC reverse
current at rated DC blocking
voltage per diode
TEST CONDITIONS SYMBOL KBU4A KBU4B KBU4D KBU4G
IF = 4.0 A
VF
TA = 25 °C
KBU4J
KBU4K KBU4M UNIT
1.0
V
5.0
μA
1.0
mA
IR
TA = 125 °C
Revision: 14-May-14
Document Number: 88656
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
KBU4A
KBU4B
KBU4D
KBU4G
RJA
19 (2)
RJL
4.0 (1)
KBU4J
KBU4K
KBU4M
UNIT
°C/W
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
8.0
51
250
Anti-static PVC tray
KBU4J-E4/51
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
60 Hz
Resistive or
Inductive Load
3
Heatsink Mounting,
TC, 2.0 x 1.6 x 3.0"
(5.0 x 4.0 x 0.8 cm)
Al. Plate
2
1
TA, PCB Mounting
0.47" x 0.47" (12 x 12 mm)
Copper Pads
Instantaneous Forward Current (A)
Average Forward Current (A)
4
0
0
100
50
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.6
150
0.8
0.7
0.9
1.0
1.1
1.2
1.3
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
50
Instantaneous Reverse Current (µA)
200
Peak Forward Surge Current (A)
10
TJ = 150 °C
Single Sine-Wave
175
150
125
100
75
50
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
25
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 14-May-14
Document Number: 88656
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
150
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
75
50
25
0
100
10
1
0.1
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBU
0.935 (23.7)
0.895 (22.7)
0.160 (4.1)
0.140 (3.6)
0.760
(19.3)
MAX.
0.185 (4.7)
0.165 (4.2)
45°
0.085 (2.2)
0.065 (1.7)
0.700
(17.8)
0.660
(16.8)
0.455 (11.3)
0.405 (10.3)
0.075 (1.9) R TYP. (2 Places)
1.0
(25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
0.220 (5.6)
0.180 (4.6)
0.240 (6.09)
0.200 (5.08)
0.205 (5.2)
0.185 (4.7)
0.280 (7.1)
0.260 (6.6)
Revision: 14-May-14
Document Number: 88656
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
