KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
Single-Phase Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
e4
• High surge current capability
• Plastic-passivated junction
~
~
~
• High case dielectric strength of 1500 VRMS
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style KBU
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: KBU
Package
KBU
IF(AV)
4A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
200 A
Terminals:
silver
plated
J-STD-002 and JESD22-B102
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
leads,
solderable
IR
5 μA
Polarity: as marked on body
VF at IF = 4 A
1.0 V
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
TJ max.
150 °C
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Circuit configuration
In-line
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL KBU4A
KBU4B
KBU4D KBU4G
KBU4J
KBU4K KBU4M UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
Maximum DC blocking voltage
Maximum average forward
rectified output current at
TC = 100 °C (1)
TA = 30 °C (2)
Peak forward surge current single sine-wave
superimposed on rated load
Operating junction and storage temperature range
4.0
IF(AV)
A
4.0
IFSM
200
A
TJ, TSTG
-50 to +150
°C
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward drop per diode
Maximum DC reverse
current at rated DC blocking
voltage per diode
TEST CONDITIONS SYMBOL KBU4A KBU4B KBU4D KBU4G
IF = 4.0 A
VF
TA = 25 °C
KBU4J
KBU4K KBU4M UNIT
1.0
V
5.0
μA
1.0
mA
IR
TA = 125 °C
Revision: 14-Apr-2020
Document Number: 88656
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
KBU4A
KBU4B
KBU4D
KBU4G
RθJA
19 (2)
RθJL
4.0 (1)
KBU4J
KBU4K
KBU4M
UNIT
°C/W
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
8.0
51
250
Anti-static PVC tray
KBU4J-E4/51
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
60 Hz
Resistive or
Inductive Load
3
Heatsink Mounting,
TC, 2.0 x 1.6 x 3.0"
(5.0 x 4.0 x 0.8 cm)
Al. Plate
2
1
TA, PCB Mounting
0.47" x 0.47" (12 x 12 mm)
Copper Pads
Instantaneous Forward Current (A)
Average Forward Current (A)
4
0
0
100
50
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.6
150
0.8
0.7
0.9
1.0
1.1
1.2
1.3
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
200
50
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
10
TJ = 150 °C
Single Sine-Wave
175
150
125
100
75
50
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
25
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 14-Apr-2020
Document Number: 88656
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
150
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
75
50
25
0
100
10
1
0.1
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBU
0.935 (23.7)
0.895 (22.7)
0.160 (4.1)
0.140 (3.6)
0.760
(19.3)
MAX.
0.185 (4.7)
0.165 (4.2)
45°
0.085 (2.2)
0.065 (1.7)
0.700
(17.8)
0.660
(16.8)
0.455 (11.3)
0.405 (10.3)
0.075 (1.9) R TYP. (2 Places)
1.0
(25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
0.220 (5.6)
0.180 (4.6)
0.240 (6.09)
0.200 (5.08)
0.205 (5.2)
0.185 (4.7)
0.280 (7.1)
0.260 (6.6)
Revision: 14-Apr-2020
Document Number: 88656
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000