LL4151
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Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diodes
• Electrical data identical with the device 1N4151
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5 per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
LL4151
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
LL4151-GS18 or LL4151-GS08
-
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 μs
Repetitive peak forward current
Forward continuous current
Average forward current
VR = 0
Power dissipation
SYMBOL
VALUE
UNIT
VRRM
75
V
VR
50
V
IFSM
2
A
IFRM
500
mA
mA
IF
300
IF(AV)
150
mA
Ptot
500
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 1.9, 25-Feb-2020
Document Number: 85559
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LL4151
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TYP.
MAX.
0.880
1
V
IR
50
nA
VR = 50 V, Tj = 150 °C
IR
50
μA
Breakdown voltage
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1 MHz,
VHF = 50 mV
CD
2
pF
IF = IR = 10 mA,
iR = 1 mA
trr
4
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2
ns
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
SYMBOL
IF = 50 mA
VF
VR = 50 V
MIN.
UNIT
75
V
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.0
Scattering Limit
C D - Diode Capacitance (pF)
I R - Reverse Current (µA)
100
10
1
0.1
2.5
2.0
1.5
1.0
0.5
V R = 50 V
0.01
0
40
80
120
160
0
200
Tj - Junction Temperature (°C)
94 9151
f = 1 MHz
Tj = 25 °C
0.1
94 9153
Fig. 1 - Reverse Current vs. Junction Temperature
1
10
100
V R - Reverse Voltage (V)
Fig. 3 - Diode Capacitance vs. Reverse Voltage
I F - Forward Current (mA)
1000
Tj = 100 °C
100
10
Tj = 25 °C
1
0.1
0
94 9152
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.9, 25-Feb-2020
Document Number: 85559
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LL4151
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
1.6 (0.063)
1.4 (0.055)
Cathode indentification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
2.5 (0.098) max.
1.25 (0.49) min.
2 (0.079) min.
Foot print recommendation:
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Rev. 1.9, 25-Feb-2020
Document Number: 85559
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000
