MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
D2PAK
ITO-220AB
(TO-263AB)
K
2
1
2
1
3
PIN 1
PIN 1
PIN 2
PIN 2
PIN 3
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
MB30H100CT
MF30H100CT
•
•
•
•
•
•
•
K
HEATSINK
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
100 V
IFSM
275 A
VF
0.67 V
MECHANICAL DATA
IR
5.0 μA
TJ max.
175 °C
Package
ITO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
Case: ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB30H100CT
Maximum repetitive peak reverse voltage
VRRM
100
Working peak reverse voltage
VRWM
100
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
(fig.1)
total device
per diode
IF(AV)
UNIT
V
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
275
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
IRRM
1.0
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heat sink t = 1 min
Revision: 19-Sep-2018
Document Number: 87737
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage per diode
VF (1)
IR (2)
Maximum reverse current per diode
TEST CONDITIONS
VALUE
UNIT
IF = 15 A
TJ = 25 °C
0.82
IF = 15 A
TJ = 125 °C
0.67
IF = 30 A
TJ = 25 °C
0.93
IF = 30 A
TJ = 125 °C
0.80
TJ = 25 °C
5.0
μA
TJ = 125 °C
6.0
mA
Rated VR
V
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width, 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MB
MF
UNIT
RJC
1.9
4.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MF30H100CTHE3_B/P (1)
PREFERRED P/N
1.99
P
50/tube
Tube
(1)
1.35
P
50/tube
Tube
1.35
I
800/reel
Tape and reel
TO-263AB
MB30H100CTHE3_B/P
TO-263AB
MB30H100CTHE3_B/I (1)
Note
(1) AEC-Q101 qualified
Revision: 19-Sep-2018
Document Number: 87737
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
10 000
Instantaneous Reverse Current (µA)
Average Forward Current (A)
35
30
25
20
MF
15
MB
10
5
0
TJ = 150 °C
TJ = 125 °C
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
25
50
75
100
125
150
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
300
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 175 °C
1000
200
150
100
50
1000
100
10
0
1
10
0.1
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 19-Sep-2018
Document Number: 87737
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
3
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 19-Sep-2018
Document Number: 87737
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
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Document Number: 91000
