MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
D2PAK (TO-263AB)
ITO-220AC
• Power pack
• Guardring for overvoltage protection
K
• Low power loss, high efficiency
• Low forward voltage drop
2
• Low leakage current
1
2
MF10H100
• High forward surge capability
MB10H90
MB10H100
1
PIN 1
PIN 1
PIN 2
PIN 2
• High frequency operation
K
HEATSINK
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for D2PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V to 100 V
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
IFSM
250 A
VF
0.64 V
IR
4.5 μA
MECHANICAL DATA
TJ max.
175 °C
Case: ITO-220AC, D2PAK (TO-263AB)
Package
ITO-220AC, D2PAK (TO-263AB)
Diode variations
Single
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
SYMBOL
MB10H90
MB10H100
Maximum repetitive peak reverse voltage
VRRM
90
100
Working peak reverse voltage
VRWM
90
100
Maximum DC blocking voltage
VDC
90
Maximum average forward rectified current
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
PARAMETER
UNIT
V
100
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
IRRM
0.5
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Revision: 16-Nov-17
Document Number: 87727
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF (1)
Maximum instantaneous forward voltage
IR (2)
Maximum reverse current
VALUE
TEST CONDITIONS
IF = 10 A
TC = 25 °C
0.77
UNIT
IF = 10 A
TC = 125 °C
0.64
IF = 20 A
TC = 25 °C
0.88
IF = 20 A
TC = 125 °C
0.73
TJ = 25 °C
4.5
μA
TJ = 125 °C
6.0
mA
Rated VR
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB
MF
UNIT
RJC
2.7
5.8
°C/W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.94
P
50/tube
Tube
1.33
P
50/tube
Tube
1.33
I
800/reel
Tape and reel
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AC
MF10H100HE3_A/P (1)
(1)(2)
TO-263AB
MB10H100HE3_A/P
TO-263AB
MB10H100HE3_A/I (1)(2)
Note
(1) AEC-Q101 qualified
(2) 90 V device available in D2PAK (TO-263AB) package only
Revision: 16-Nov-17
Document Number: 87727
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
20
Instantaneous Reverse Current (µA)
10 000
Average Forward Current (A)
Resistive or Inductive Load
16
MB
12
8
4
MF
TJ = 125 °C
1000
TJ = 100 °C
100
10
1
0.1
TJ = 25 °C
0.01
0
50
0
150
100
20
180
40
60
80
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
300
10 000
250
200
150
100
50
0
1000
100
10
1
100
10
0.1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 150 °C
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.01
0.1
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Nov-17
Document Number: 87727
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 16-Nov-17
Document Number: 87727
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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