MBR1090CT, MBR10100CT
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
®
• Trench MOS Schottky technology
• Lower power losses, high efficiency
TO-220AB
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 5.0 A
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max.
150 °C
Package
TO-220AB
Diode variation
Dual common cathode
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
MBR10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Voltage rate of change
Operating junction and storage temperature range
10
IF(AV)
A
5.0
120
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +150
°C
IFSM
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
TEST CONDITIONS
IF = 5.0 A
Maximum reverse current per diode at
working peak reverse voltage
TA = 125 °C
TA = 25 °C
TA = 25 °C
TA = 100 °C
SYMBOL
VF (1)
IR (2)
MBR1090CT
MBR10100CT
0.75
0.85
UNIT
V
100
μA
6.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 11-May-16
Document Number: 89197
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR1090CT, MBR10100CT
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
MBR1090CT
MBR10100CT
RJC
UNIT
4.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.87
4W
50/tube
Tube
MBR10100CT-M3/4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
4.0
D = 0.8
3.5
8
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
6
4
2
D = 0.5
D = 0.3
3.0
D = 0.2
2.5
D = 1.0
D = 0.1
2.0
1.5
T
1.0
D = tp/T
0.5
0
0
0
100
50
0
150
1
3
2
4
5
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Forward Power Loss Characteristics Per Diode
120
100
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
tp
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
100
80
60
40
20
0
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Number of Cycles at 60 Hz
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Instantaneous Forward Characteristics
Per Diode
Revision: 11-May-16
Document Number: 89197
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR1090CT, MBR10100CT
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
0
20
40
60
80
Junction to Case
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 11-May-16
Document Number: 89197
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000