MBR1635, MBR1645, MBR1660
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
TO-220AC
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
1
MBR16xx
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
16 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.65 V
TJ max.
150 °C
Package
TO-220AC
Diode variations
Single
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
SYMBOL
MBR1635
MBR1645
MBR1660
Maximum repetitive peak reverse voltage
VRRM
35
45
60
Working peak reverse voltage
VRWM
35
45
60
Maximum DC blocking voltage
VDC
35
45
60
Maximum average forward rectified current
at TC = 125 °C
IF(AV)
16
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
PARAMETER
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
TJ
-65 to +150
TSTG
-65 to +175
Operating junction temperature range
Storage temperature range
1.0
UNIT
V
A
0.5
V/μs
°C
Revision: 16-Nov-17
Document Number: 87590
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR1635, MBR1645, MBR1660
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
VF (1)
Maximum instantaneous reverse current
at DC blocking voltage
IR (1)
TEST CONDITIONS
MBR1635
MBR1645
MBR1660
IF = 16 A
TC = 25 °C
0.63
0.75
IF = 16 A
TC = 125 °C
0.57
0.65
TC = 25 °C
0.2
1.0
TC = 125 °C
40
50
Rated VR
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
SYMBOL
MBR
UNIT
RJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
PREFERRED P/N
MBR1645-E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.80
45
50/tube
Tube
Revision: 16-Nov-17
Document Number: 87590
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR1635, MBR1645, MBR1660
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (mA)
20
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
0
TJ = 125 °C
10
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0.001
50
0
100
0
150
40
20
80
60
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR1635, MBR1645
MBR1660
100
0
1
10
100
1
0.1
100
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
10 000
150
Peak Forward Surge Current (A)
MBR1635, MBR1645
MBR1660
TJ = 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
MBR1635, MBR1645
MBR1660
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Nov-17
Document Number: 87590
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR1635, MBR1645, MBR1660
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
1
PIN
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
2
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 2
0.105 (2.67)
0.095 (2.41)
0.603 (15.32)
0.573 (14.55)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 16-Nov-17
Document Number: 87590
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 01-Jan-2022
1
Document Number: 91000
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