MBR2090CT-M3, MBR20100CT-M3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
TMBS ®
• Lower power losses, high efficiency
TO-220AB
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
TYPICAL APPLICATIONS
1
PIN 1
PIN 2
PIN 3
CASE
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
Package
TO-220AB
Diode variation
Common cathode
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Max. repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
VDC
90
100
V
Max. DC blocking voltage
Max. average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
total device
per diode
IF(AV)
20
10
A
150
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +150
°C
IFSM
Revision: 11-May-16
Document Number: 89192
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR2090CT-M3, MBR20100CT-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Max. instantaneous forward voltage per diode
IF = 10 A
IF = 20 A
SYMBOL
UNIT
0.80
VF (1)
TC = 125 °C
0.65
V
0.75
TJ = 25 °C
Max. reverse current per diode
at working peak reverse voltage
VALUE
TC = 25 °C
IR (2)
TJ = 100 °C
100
μA
6.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MBR2090CT, MBR20100CT
RJA
60
RJC
2.0
Typical thermal resistance per diode
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.88
4W
50/tube
Tube
MBR20100CT-M3/4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
160
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
140
120
100
80
60
40
0
0
50
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 11-May-16
Document Number: 89192
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR2090CT-M3, MBR20100CT-M3
www.vishay.com
Vishay General Semiconductor
10 000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
50
60
70
80
90
Junction to Case
10
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 11-May-16
Document Number: 89192
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000
