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MBR40H35PT-E3/45

MBR40H35PT-E3/45

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO3P

  • 描述:

    DIODE ARRAY SCHOTTKY 35V TO3P

  • 数据手册
  • 价格&库存
MBR40H35PT-E3/45 数据手册
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 • High frequency operation 1 TO-3P (TO-247AD) PIN 1 PIN 2 PIN 3 CASE • Solder dip 260 °C, 40 s • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 40 A VRRM 35 V, 45 V, 50 V, 60 V For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. IFSM 400 A VF 0.55 V, 0.60 V TJ max. 175 °C Package TO-3P (TO-247AD) Epoxy meets UL 94 V-0 flammability rating Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test MECHANICAL DATA Case: TO-3P (TO-247AD) Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current (fig. 1) IF(AV) 40 A Non-repetitive avalanche energy per diode  at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 400 A V Peak repetitive reverse surge current per diode (1) IRRM 2.0 1.0 A Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 30 25 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k VC Voltage rate of change at (rated VR) Operating junction temperature range Storage temperature range 25 kV dV/dt 10 000 V/μs TJ -65 to +175 °C TSTG -65 to +175 °C Note (1) 2.0 μs pulse width, f = 1.0 kHz Revision: 27-May-2020 Document Number: 88794 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 20 A Maximum instantaneous forward voltage per diode (1) TJ = 25 °C IF = 20 A TJ = 125 °C IF = 40 A SYMBOL TJ = 25 °C VF IF = 40 A TJ = 125 °C Maximum reverse current at rated VR per diode (2) TJ = 25 °C TJ = 125 °C IR MBR40H35PT MBR40H45PT TYP. MAX. MBR40H50PT MBR40H60PT UNIT TYP. MAX. - 0.63 - 0.69 0.49 0.55 0.56 0.60 - 0.73 - 0.83 0.62 0.66 0.68 0.72 9.0 150 25 6.0 150 25 V μA mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS PARAMETER SYMBOL MBR40H35PT Thermal resistance, junction to case per diode MBR40H45PT MBR40H50PT MBR40H60PT RJC 1.2 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR40H45PT-E3/45 6.13 45 30/tube Tube Revision: 27-May-2020 Document Number: 88794 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 45 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 40 35 30 25 20 15 10 5 1 TJ = 125 °C 0.1 MBR40H35PT, MBR40H45PT MBR40H50PT, MBR40H60PT 0.01 0.001 TJ = 25 °C 0.0001 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 400 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave (JEDEC Method) Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 10 300 200 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 TJ = 125 °C 0.1 MBR40H35PT, MBR40H45PT MBR40H50PT, MBR40H60PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 27-May-2020 Document Number: 88794 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3P (TO-247AD) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Revision: 27-May-2020 Document Number: 88794 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
MBR40H35PT-E3/45 价格&库存

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