MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
3
• High forward surge capability
2
• High frequency operation
1
TO-3P (TO-247AD)
PIN 1
PIN 2
PIN 3
CASE
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
40 A
VRRM
35 V, 45 V, 50 V, 60 V
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
IFSM
400 A
VF
0.55 V, 0.60 V
TJ max.
175 °C
Package
TO-3P (TO-247AD)
Epoxy meets UL 94 V-0 flammability rating
Circuit configuration
Common cathode
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
MECHANICAL DATA
Case: TO-3P (TO-247AD)
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current (fig. 1)
IF(AV)
40
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
400
A
V
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 μs waveform)
ERSM
30
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
VC
Voltage rate of change at (rated VR)
Operating junction temperature range
Storage temperature range
25
kV
dV/dt
10 000
V/μs
TJ
-65 to +175
°C
TSTG
-65 to +175
°C
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
Revision: 27-May-2020
Document Number: 88794
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 20 A
Maximum instantaneous forward voltage
per diode (1)
TJ = 25 °C
IF = 20 A TJ = 125 °C
IF = 40 A
SYMBOL
TJ = 25 °C
VF
IF = 40 A TJ = 125 °C
Maximum reverse current at rated VR
per diode (2)
TJ = 25 °C
TJ = 125 °C
IR
MBR40H35PT
MBR40H45PT
TYP.
MAX.
MBR40H50PT
MBR40H60PT
UNIT
TYP.
MAX.
-
0.63
-
0.69
0.49
0.55
0.56
0.60
-
0.73
-
0.83
0.62
0.66
0.68
0.72
9.0
150
25
6.0
150
25
V
μA
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL MBR40H35PT
Thermal resistance, junction to case per diode
MBR40H45PT MBR40H50PT MBR40H60PT
RJC
1.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR40H45PT-E3/45
6.13
45
30/tube
Tube
Revision: 27-May-2020
Document Number: 88794
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
45
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
40
35
30
25
20
15
10
5
1
TJ = 125 °C
0.1
MBR40H35PT, MBR40H45PT
MBR40H50PT, MBR40H60PT
0.01
0.001
TJ = 25 °C
0.0001
0
0
25
50
75
100
125
150
0
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
400
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
(JEDEC Method)
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
10
300
200
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR40H35PT, MBR40H45PT
MBR40H50PT, MBR40H60PT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 27-May-2020
Document Number: 88794
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3P (TO-247AD)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
Revision: 27-May-2020
Document Number: 88794
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000