MBRB10100CT-E3/8W

MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier FEATURES ® • Trench MOS Schottky technology TMBS • Lower power losses, high efficiency TO-220AB • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 2 TYPICAL APPLICATIONS 1 PIN 1 PIN 2 PIN 3 CASE For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application MECHANICAL DATA Case: TO-220AB PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 90 V, 100 V IFSM 120 A VF 0.75 V TJ max. 150 °C Package TO-220AB Diode variation Dual common cathode Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs max.   MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT Max. repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V VDC 90 100 V Max. DC blocking voltage Max. average forward rectified current at TC = 105 °C total device per diode IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 60 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ, TSTG -65 to +150 °C Operating junction and storage temperature range Revision: 10-May-16 Document Number: 89125 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL IF = 5.0 A TC = 125 °C IF = 5.0 A TC = 25 °C UNIT V 0.85 IR (2) TJ = 100 °C MBR10100CT 0.75 VF (1) TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage MBR1090CT 100 μA 6.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode MBR1090CT MBR10100CT RJC UNIT 4.4 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 10 4.0 8 D = 0.8 3.5 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 6 4 2 0 0 100 50 150 Case Temperature (°C) D = 0.5 D = 0.3 3.0 D = 0.2 2.5 D = 1.0 D = 0.1 2.0 1.5 T 1.0 D = tp/T 0.5 tp 0 0 Fig. 1 - Forward Current Derating Curve 1 2 3 4 5 6 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Per Diode Peak Forward Surge Current (A) 120 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 100 80 60 40 20 0 1 10 100 Number of Cycles at 60 Hz Revision: 10-May-16 Document Number: 89125 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C Junction to Case 0.1 0.01 0.1 0 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 t - Pulse Duration (s) Instantaneous Forward Voltage (V) Fig. 7 - Typical Transient Thermal Impedance Per Diode Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Per Diode Revision: 10-May-16 Document Number: 89125 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 10-May-16 Document Number: 89125 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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