MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
D2PAK (TO-263AB)
• Trench MOS Schottky technology
K
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
• High frequency operation
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
MBRB1090
MBRB10100
PIN 1
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
HEATSINK
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: D2PAK (TO-263AB)
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB1090
MBRB10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +150
°C
MAX.
UNIT
Voltage rate of change (rated VR)
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage (1)
TEST CONDITIONS
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 125 °C
Maximum reverse current per at working
peak reverse voltage (2)
TJ = 25 °C
TJ = 125 °C
SYMBOL
0.80
VF
0.65
V
0.75
IR
100
μA
6.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 18-May-2021
Document Number: 87981
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
MBRB
RθJA
60
RθJC
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
MBRB10100-M3/4W
PREFERRED P/N
1.384
4W
50/tube
DELIVERY MODE
Tube
TO-263AB
MBRB10100-M3/8W
1.384
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
Instantaneous Forward Current (A)
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
2
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0
50
100
150
0
0.1
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
100
160
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
0.2
Instantaneous Forward Voltage (V)
140
120
100
80
60
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
40
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Revision: 18-May-2021
Document Number: 87981
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
100
10
1
10
1
0.1
0.01
100
10
Junction to Case
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 18-May-2021
Document Number: 87981
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000
