MBRB10H60HE3_B/P

MBRB10H60HE3_B/P

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-263(D²Pak)

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
MBRB10H60HE3_B/P 数据手册
MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current 2 • High frequency operation 1 1 MBR10Hxx • High forward surge capability 2 MBRF10Hxx PIN 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) PIN 1 CASE PIN 2 PIN 2 • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) TO-263AB K • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 1 MBRB10Hxx PIN 1 PIN 2 K HEATSINK MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 35 V to 60 V IFSM 150 A VF 0.55 V, 0.61 V IR 100 µA TJ max. 175 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (Fig. 1) IF(AV) 10 A Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse current at tp = 2.0 µs, 1 kHz IRRM 1.0 0.5 A Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 20 10 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 kΩ Voltage rate of change (rated VR) Document Number: 88780 Revision: 19-May-08 VC 25 kV dV/dt 10 000 V/µs For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT TJ - 65 to + 175 °C Storage temperature range TSTG - 65 to + 175 °C Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction temperature range ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 10 A IF = 10 A IF = 20 A IF = 20 A Maximum reverse current at rated VR (2) SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 TYP. MAX. TYP. MAX. UNIT TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VF 0.49 0.62 0.63 0.55 0.75 0.68 0.57 0.68 0.71 0.61 0.85 0.71 V TJ = 25 °C TJ = 125 °C IR 4.0 100 12 2.0 100 12 µA mA Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL MBR MBRF MBRB UNIT RθJC 2.0 4.0 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10H45-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF10H45-E3/45 1.94 45 50/tube Tube TO-263AB MBRB10H45-E3/45 1.33 45 50/tube Tube TO-263AB MBRB10H45-E3/81 1.33 81 800/reel Tape and reel TO-220AC MBR10H45HE3/45 (1) 1.80 45 50/tube Tube ITO-220AC MBRF10H45HE3/45 (1) 1.94 45 50/tube Tube TO-263AB MBRB10H45HE3/45 (1) 1.33 45 50/tube Tube TO-263AB MBRB10H45HE3/81 (1) 1.33 81 800/reel Tape and reel Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88780 Revision: 19-May-08 MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 15 MBR, MBRB 10 MBRF 5 TJ = 150 °C 1 TJ = 125 °C 0.1 MBR10H35 - MBR10H45 MBR10H50 - MBR10H60 0.01 0.001 TJ = 25 °C 0.0001 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Characteristics 175 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 125 100 75 50 25 MBR10H35 - MBR10H45 MBR10H50 - MBR10H60 1000 100 1 10 100 0 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance 10 10 TJ = 150 °C TJ = 25 °C 1 TJ = 125 °C 0.1 MBR10H35 - MBR10H45 MBR10H50 - MBR10H60 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 88780 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.191 (4.85) 0.171 (4.35) CASE 0.037 (0.94) 0.027 (0.68) 7° REF. 2 1 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.671 (17.04) 0.651 (16.54) PIN 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 7° REF. 0.076 (1.93) REF. 45° REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88780 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
MBRB10H60HE3_B/P
物料型号: - 文档描述了Vishay品牌的MBR(F,B)10H35至MBR(F,B)10H60系列肖特基二极管。

器件简介: - 这些二极管采用高阻垒技术,提高高温性能,具有过压保护的防护环,低正向电压降,低漏电流,高效率,高频操作能力,符合RoHS标准。

引脚分配: - TO-220AC和ITO-220AC封装的二极管有2个引脚,分别标记为PIN 1和PIN 2,以及一个散热片引脚。TO-263AB封装的二极管也有PIN 1和PIN 2,以及一个散热片。

参数特性: - 典型正向平均电流为10A,反向重复峰值电压从35V到60V不等。非重复雪崩能量和峰值正向浪涌电流等参数也根据不同型号有所不同。

功能详解: - 主要应用于低压、高频整流的开关电源、续流二极管、DC-DC转换器或极性保护应用。

应用信息: - 适用于低电压、高频整流的开关电源、续流二极管、DC-DC转换器或极性保护等应用。

封装信息: - 提供了TO-220AC、ITO-220AC和TO-263AB三种封装方式,每种封装方式都有详细的机械数据和引脚信息。
MBRB10H60HE3_B/P 价格&库存

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