MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
D2PAK (TO-263AB)
ITO-220AB
•
•
•
•
•
•
•
K
2
1
2
1
3
MBRF20xxCT
PIN 1
MBRB20xxCT
PIN 1
PIN 2
PIN 2
PIN 3
K
HEATSINK
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
DESIGN SUPPORT TOOLS
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For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
Models
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
45 V, 60 V
IFSM
150 A
VF
0.57 V, 0.70 V
TJ max.
150 °C
Package
ITO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
Case: ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB2045CT
MBRB2060CT
Maximum repetitive peak reverse voltage
VRRM
45
60
Working peak reverse voltage
VRWM
45
60
Maximum DC blocking voltage
VDC
45
60
Maximum average forward rectified current
at TC = 135 °C
total device
per diode
V
20
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction temperature range
UNIT
A
150
1.0
0.5
TJ
-65 to +150
Storage temperature range
TSTG
-65 to +175
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500
V/μs
°C
V
Revision: 26-Sep-2018
Document Number: 88674
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
per diode
VF (1)
Maximum reverse current at DC blocking
voltage per diode
IR (2)
TEST CONDITIONS
IF = 10 A
TC = 25 °C
MBRB2045CT
MBRB2060CT
0.65
0.80
UNIT
IF = 10 A
TC = 125 °C
0.57
0.70
IF = 20 A
TC = 25 °C
0.84
0.95
IF = 20 A
TC = 125 °C
0.72
0.85
TC = 25 °C
0.1
0.15
TC = 125 °C
15
150
SYMBOL
MBRF
MBRB
UNIT
RJC
5.0
2.0
°C/W
Rated VR
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical resistance from junction to case per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
MBRF2045CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB2045CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB2045CT-E3/81
1.35
81
800/reel
Tape and reel
ITO-220AB
MBRF2045CTHE3_A/P (1)
1.99
P
50/tube
Tube
(1)
1.35
P
50/tube
Tube
1.35
I
800/reel
Tape and reel
TO-263AB
MBRB2045CTHE3_B/P
TO-263AB
MBRB2045CTHE3_B/I (1)
Notes
(1) AEC-Q101 qualified
Revision: 26-Sep-2018
Document Number: 88674
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
20
Instantaneous Reverse Current (mA)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
50
0
100
0
150
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
160
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
140
Junction Capacitance (pF)
Peak Forward Surge Current (A)
MBRB2045CT
MBRB2060CT
120
100
80
60
1000
MBRB2045CT
MBRB2060CT
40
100
100
10
1
1
0.1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
MBRB2045CT
MBRB2060CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 26-Sep-2018
Document Number: 88674
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
3
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 26-Sep-2018
Document Number: 88674
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000
