MBRB20H60CTHE3_B/I

MBRB20H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • • • • • • • • 2 D PAK (TO-263AB) K 2 1 MBRB20H60CT PIN 1 PIN 2 DESIGN SUPPORT TOOLS K HEATSINK click logo to get started Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Models For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. Available PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 60 V IFSM 150 A VF 0.61 V IR 100 μA TJ max. 175 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage total device per diode Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz Peak non-repetitive reverse energy (8/20 μs waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction and storage temperature range Maximum average forward rectified current (fig. 1) SYMBOL VRRM VRWM VDC EAS MBRB20H60CT 60 60 60 20 10 80 IFSM 150 IRRM ERSM 0.5 10 mJ VC 25 kV dV/dt TJ, TSTG 10 000 -65 to +175 V/μs °C IF(AV) UNIT V A mJ A Revision: 13-Jun-2018 Document Number: 88787 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB20H60CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) IR (2) Maximum reverse current per diode MBRB20H60CT TEST CONDITIONS TYP. MAX. 0.71 IF = 10 A TC = 25 °C - IF = 10 A TC = 125 °C 0.57 0.61 IF = 20 A TC = 25 °C - 0.85 IF = 20 A TC = 125 °C Rated VR UNIT V 0.68 0.71 TJ = 25 °C - 100 μA TJ = 125 °C 2.0 12 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical resistance, junction to case per diode SYMBOL MBRB20H60CT UNIT RJC 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N (1) TO-263AB MBRB20H60CTHE3_A/P TO-263AB MBRB20H60CTHE3_A/I (1) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.35 P 50/tube Tube 1.35 I 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 13-Jun-2018 Document Number: 88787 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB20H60CT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 100 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 25 20 15 10 5 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve (Total) Fig. 4 - Typical Reverse Characteristics Per Diode 175 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 125 100 75 50 25 100 10 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 10 TJ = 150 °C 1 TJ = 25 °C TJ = 125 °C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 13-Jun-2018 Document Number: 88787 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB20H60CT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 13-Jun-2018 Document Number: 88787 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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