MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
D2PAK (TO-263AB)
•
•
•
•
•
•
•
•
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
2
1
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
DESIGN SUPPORT TOOLS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
click logo to get started
Models
MECHANICAL DATA
Available
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V, 45 V, 60 V
IFSM
150 A
VF
0.54 V, 0.60 V
IR
100 μA
TJ max.
Package
Circuit configuration
175 °C
D2PAK
(TO-263AB)
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
MBRB25H45CT
MBRB25H60CT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
Working peak reverse voltage
VRWM
35
45
60
Maximum DC blocking voltage
VDC
35
45
60
Max. average forward rectified current (fig. 1)
SYMBOL MBRB25H35CT
total device
per diode
30
IF(AV)
UNIT
V
A
15
Non-repetitive avalanche energy per diode at 25 °C,
IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at tp = 2.0 μs,
1 kHz
IRRM
1.0
1.0
0.5
A
Peak non-repetitive reverse energy (8/20 μs waveform)
ERSM
25
25
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
Operating junction and storage temperature range
VC
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
Revision: 19-Sep-2018
Document Number: 88789
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
per diode
TEST CONDITIONS
IF = 15 A
VF (1)
IF = 30 A
Maximum reverse current per diode
IR (2)
Rated VR
MBRB25H35CT
MBRB25H45CT
MBRB25H60CT
TYP.
MAX.
TYP.
MAX.
TJ = 25 °C
-
0.64
-
0.70
TJ = 125 °C
0.50
0.54
0.56
0.60
TJ = 25 °C
-
0.74
-
0.85
UNIT
V
TJ = 125 °C
0.63
0.67
0.68
0.72
TJ = 25 °C
-
100
-
100
μA
TJ = 125 °C
6.0
20
4.0
20
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
MBRB
UNIT
RJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
MBRB25H60CTHE3_B/P (1)
1.35
P
50/tube
DELIVERY MODE
Tube
TO-263AB
MBRB25H60CTHE3_B/I (1)
1.35
I
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 19-Sep-2018
Document Number: 88789
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
40
30
20
10
0
25
50
75
100
125
150
1
TJ = 125 °C
0.1
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
0.01
0.001
TJ = 25 °C
0
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
150
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
125
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
0.0001
0
100
75
50
1000
25
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
100
0
1
10
0.1
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 125 °C
0.1
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 19-Sep-2018
Document Number: 88789
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 19-Sep-2018
Document Number: 88789
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000