MBR3045CT, MBRB3035CT, MBRB3045CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
D2PAK (TO-263AB)
TO-220AB
• Power pack
• Guardring for overvoltage protection
K
• Low power loss, high efficiency
• Low forward voltage drop
2
2
MBR3045CT
• High forward surge capability
1
3
• High frequency operation
MBRB3035CT
MBRB3045CT
1
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
K
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package)
HEATSINK
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V, 45 V
IFSM
200 A
MECHANICAL DATA
VF
0.60 V
Case: TO-220AB, D2PAK (TO-263AB)
TJ max.
150 °C
Package
TO-220AB, D2PAK (TO-263AB)
Diode variations
Common cathode
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB3035CT
MBRB3045CT
Maximum repetitive peak reverse voltage
VRRM
35
45
Working peak reverse voltage
VRWM
35
45
VDC
35
Maximum DC blocking voltage
per diode
45
IF(AV)
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
Peak repetitive reverse current per diode at tp = 2.0 μs, 1 kHz
IRRM
2.0
Voltage rate of change (rated VR)
dV/dt
10 000
TJ
-65 to +150
TSTG
-65 to +175
Operating junction temperature range
Storage temperature range
V
30
total device
Maximum average forward rectified current
UNIT
V/μs
°C
Revision: 17-Nov-17
Document Number: 88677
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR3045CT, MBRB3035CT, MBRB3045CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VF (1)
Maximum instantaneous forward voltage per diode
Maximum instantaneous reverse current at DC blocking voltage
per diode
IR (1)
VALUE
IF = 20 A
TC = 125°C
0.60
IF = 30 A
TC = 25°C
0.76
IF = 30 A
TC = 125°C
0.72
TJ = 25 °C
1.0
TJ = 125 °C
60
Rated VR
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width d 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRB
UNIT
RTJC
1.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
50/tube
Tube
TO-220AB
MBR3045CT-E3/4W
1.85
4W
TO-263AB
MBRB3045CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB3045CT-E3/81
1.35
81
800/reel
Tape and reel
TO-263AB
MBRB3045CTHE3_A/P (1)(2)
1.35
P
50/tube
Tube
TO-263AB
MBRB3045CTHE3_A/I (1)(2)
1.35
I
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
(2) 35 V device available in AEC-Q101 qualified D2PAK (TO-263AB) package only
Revision: 17-Nov-17
Document Number: 88677
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR3045CT, MBRB3035CT, MBRB3045CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (mA)
30
Average Forward Current (A)
Resistive or Inductive Load
24
18
12
6
TJ = 125 °C
1.0
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
50
0
150
100
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
300
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
Junction Capacitance (pF)
Peak Forward Surge Current (A)
10
200
150
100
50
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0
1
0.1
100
10
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
1.0
TJ = 25 °C
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 17-Nov-17
Document Number: 88677
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR3045CT, MBRB3035CT, MBRB3045CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
TO-220AB
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.145 (3.68)
0.135 (3.43)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 17-Nov-17
Document Number: 88677
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000