MBRB30H60CT-E3/45

MBRB30HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES D2PAK • • • • • • • • Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (TO-263AB) K 2 1 MBRB30HxxCT PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A MECHANICAL DATA VRRM 45 V, 60 V IFSM 150 A Case: D2PAK (TO-263AB) VF 0.56 V, 0.59 V IR 80 μA, 60 μA TJ max. 175 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL MBRB30H45CT MBRB30H60CT UNIT Maximum repetitive peak reverse voltage PARAMETER VRRM 45 60 V Working peak reverse voltage VRWM 45 60 V Maximum DC blocking voltage VDC 45 60 V Maximum average forward rectified current (fig. 1) total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz Peak non-repetitive reverse energy (8/20 μs waveform) 30 IF(AV) A 15 150 IFSM A IRRM 1.0 0.5 A ERSM 25 20 mJ Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Electrostatic discharge capacitor voltage human body model:  C = 100 pF, R = 1.5 k VC 25 kV dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 07-Jul-2020 Document Number: 87539 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB30HxxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 15 A TC = 25 °C IF = 15 A TC = 125 °C IF = 30 A TC = 25 °C IF = 30 A SYMBOL MBRB30H60CT MAX. TYP. MAX. - 0.62 - 0.68 0.49 0.56 0.55 0.59 - 0.73 - 0.83 0.62 0.67 0.68 0.71 - 80 - 60 μA 5.0 15 4.0 15 mA VF (1) TC = 125 °C TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage MBRB30H45CT TYP. TJ = 125 °C IR (2) UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB UNIT RJC 1.5 °C/W Typical thermal resistance junction to case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB MBRB30H45CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H45CT-E3/81 1.35 81 800/reel Tape and reel TO-263AB MBRB30H45CTHE3_B/P (1) 1.35 P 50/tube Tube TO-263AB MBRB30H45CTHE3_B/I (1) 1.35 I 800/reel Tape and reel Notes (1) AEC-Q101 qualified Revision: 07-Jul-2020 Document Number: 87539 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB30HxxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 40 30 20 10 0 25 50 75 100 125 150 1 TJ = 125 °C 0.1 MBRB30H45CT MBRB30H60CT 0.01 0.001 175 TJ = 25 °C 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 150 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 0.0001 0 100 75 50 25 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 MBRB30H45CT MBRB30H60CT 0 100 10 1 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 10 TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 0.1 MBRB30H45CT MBRB30H60CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 07-Jul-2020 Document Number: 87539 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB30HxxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 07-Jul-2020 Document Number: 87539 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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