MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
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Vishay General Semiconductor
High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
TO-220AC
FEATURES
ITO-220AC
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
2
1
1
MBR1090
MBR10100
MBRF1090
MBRF10100
PIN 1
PIN 2
PIN 1
CASE
PIN 2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
2
1
MBRB1090
MBRB10100
PIN 1
PIN 2
• High frequency operation
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
K
HEATSINK
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
Package
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Circuit configuration
Single
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
130
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-65 to +150
°C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
V
Revision: 17-Mar-2021
Document Number: 89034
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
SYMBOL
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 125 °C
UNIT
0.80
VF (1)
V
0.65
0.75
TJ = 25 °C
Maximum reverse current per at working peak
reverse voltage
MAX.
IR (2)
TJ = 125 °C
100
µA
6.0
mA
UNIT
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
RθJA
60
-
60
RθJC
2.0
3.5
2.0
Typical thermal resistance
°C/W
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AC
MBR10100-E3/4W
1.845
4W
50/tube
Tube
ITO-220AC
MBRF10100-E3/4W
1.661
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/4W
1.384
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/8W
1.384
8W
800/reel
Tape and reel
PACKAGE
PREFERRED P/N
DELIVERY MODE
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
160
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
2
TJ = TJ max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
0
0
50
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 17-Mar-2021
Document Number: 89034
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
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Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
0.9
10
1
MBR(B)
0.1
0.01
1.0
0.1
1
100
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
100
10
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
0.5
Junction to Case
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
60
50
70
80
90
100
Junction to Case
1
0.1
0.01
MBRF
0.001
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 17-Mar-2021
Document Number: 89034
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54)
0.380 (9.65)
TO-220AC
0.161 (4.08)
DIA.
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.635 (16.13)
0.625 (15.87)
1
PIN
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
2
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 17-Mar-2021
Document Number: 89034
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
D2PAK (TO-263AB)
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 17-Mar-2021
Document Number: 89034
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000