MMBZ27VDA-G3-18

MMBZ27VDA-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes with common anode configurations 3 • Dual package provides for bidirectional or separate unidirectional configurations 1 • The dual configurations protect two separate lines with only one device 2 • Peak power: 40 W at 1 ms (bidirectional) DESIGN SUPPORT TOOLS • For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3 click logo to get started • AEC-Q101 qualified available  (part number on request) Models Available • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 27 V Test current IZT 1 mA VZ specification Circuit configuration • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Pulse current Dual common anode ORDERING INFORMATION DEVICE NAME MMBZ27VDA-G ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY MMBZ27VDA-G3-08 3000 (8 mm tape on 7" reel) 15 000 MMBZ27VDA-G3-18 10 000 (8 mm tape on 13" reel) 10 000 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals SOT-23 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Peak power dissipation (1) Power dissipation on FR-5 board (2) Power dissipation on alumina substrate (3) Thermal resistance junction to ambient air Operating temperature range Storage temperature range Tamb = 25 °C, derate above 25 °C Tamb = 25 °C, derate above 25 °C SYMBOL VALUE PPK 40 W 225 mW Ptot Ptot UNIT 1.8 mW/K 300 mW 2.4 mW/K RthJA 556 K/W Top -55 to +150 °C Tj, Tstg -55 to +150 °C Notes (1) Non repetitive current pulse per figure 2 and derate above T amb = 25 °C per figure 3 (2) FR-5 = 1" x 0.75" x 0.62" (3) Alumina = 0.4" x 0.3" x 0.024", 99.5 % alumina. Rev. 1.1, 20-Feb-18 Document Number: 85244 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMBZ27VDA-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) WORKING MAX. MAX. PEAK REVERSE REVERSE TEST SURGE CURRENT REVERSE LEAKAGE VOLTAGE CURRENT CURRENT ZENER VOLTAGE RANGE (1) MARKING CODE PART NUMBER MAX. REVERSE MAX. MAX. VOLTAGE TEMPERATURE FORWARD (CLAMPING COEFFICIENT VOLTAGE VOLTAGE) (2) VZ at IZT1 IZT1 VRWM IR at VRWM IPP VC at IRSM VZ V mA V nA A V mV/°C V VF at IF mA 1 22 80 1 38 30 1.1 200 MIN. NOM. MAX. MMBZ27VDA-G TA8 25.65 27 28.35 Notes (1) V measured at pulse test current I Z ZT1 at an ambient temperature of 25 °C (2) Surge current waveform per figure 2 and derate per figure 3 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Peak pulse derating in % of peak power or current at TA = 25 Z (°C) Ptot, Power Dissipation (mW) 300 250 Alumina substrate 200 150 FR-5 board 100 50 0 75 50 25 0 0 25 18655 50 75 100 125 17 T,Temperature (°C) 200 tr 0 18657 Fig. 1 - Steady State Power Derating Curve Value (%) 100 25 50 75 100 125 150 175 200 TA - Ambient Temperature (°C) Fig. 3 - Pulse Derating Curve Pulse width (tp) is defined as that point where the peak current decays to 50 % of IRSM tr ≤ 10 µs Peak value - IRSM 100 Half value - IRSM 2 50 tp 0 0 18656 1 2 3 4 5 t - Time (ms) Fig. 2 - Pulse Waveform Rev. 1.1, 20-Feb-18 Document Number: 85244 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMBZ27VDA-G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.1, 20-Feb-18 Document Number: 85244 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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