MMBZ27VDA
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
• Dual silicon planar Zener diodes with common
anode configurations
3
Available
• Dual package provides for bidirectional or
separate unidirectional configurations
1
• The dual configurations protect two separate
lines with only one device
2
• Peak power: 40 W at 1 ms (bidirectional)
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
• AEC-Q101 qualified available
PRIMARY CHARACTERISTICS
PARAMETER
VZ range nom.
Test current IZT
VBR
VWM
PPPM
TJ max.
VZ specification
Circuit configuration
Polarity
VALUE
UNIT
27
1
27
22
40
150
Pulse current
Common anode
Uni-directional, bi-directional
V
mA
V
V
W
°C
• ESD capability according to AEC-Q101:
human body model > 8 kV
machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
MMBZ27VDA-E3-08
MMBZ27VDA
MMBZ27VDA-HE3-08
MMBZ27VDA-E3-18
MMBZ27VDA-HE3-18
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY LEVEL
SOLDERING CONDITIONS
8.8 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Peak power dissipation (1)
Power dissipation on FR-5 board (2)
Power dissipation on alumina substrate (3)
Tamb = 25 °C,
derate above 25 °C
Tamb = 25 °C,
derate above 25 °C
Thermal resistance junction to ambient air
Operating temperature range
Storage temperature range
SYMBOL
VALUE
PPK
40
W
225
mW
Ptot
Ptot
UNIT
1.8
mW/K
300
mW
2.4
mW/K
RthJA
556
K/W
Top
-55 to +150
°C
Tj, Tstg
-55 to +150
°C
Notes
(1) Non repetitive current pulse per figure 2 and derate above T
amb = 25 °C per figure 3
(2) FR-5 = 1" x 0.75" x 0.62"
(3) Alumina = 0.4" x 0.3" x 0.024", 99.5 % alumina
Rev. 1.8. 30-Oct-2020
Document Number: 81294
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMBZ27VDA
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
MAX.
MAX.
WORKING
REVERSE REVERSE
PEAK
TEST
SURGE
CURRENT REVERSE LEAKAGE
VOLTAGE CURRENT CURRENT
ZENER VOLTAGE
RANGE (1)
MARKING
CODE
PART NUMBER
MAX.
REVERSE
MAX.
MAX.
VOLTAGE TEMPERATURE FORWARD
(CLAMPING COEFFICIENT VOLTAGE
VOLTAGE) (2)
VZ at IZT1
IZT1
VRWM
IR at VRWM
IPP
VC at IRSM
VZ
V
mA
V
nA
A
V
mV/°C
V
VF at IF
mA
1
22
80
1
38
30
1.1
200
MIN. NOM. MAX.
MMBZ27VDA
TA7
25.65
27
28.35
Notes
(1) V measured at pulse test current I
Z
ZT1 at an ambient temperature of 25 °C
(2) Surge current waveform per figure 2 and derate per figure 3
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Peak pulse derating in % of peak
power or current at TA = 25 °C (°C)
Ptot, Power Dissipation (mW)
300
250
Alumina substrate
200
150
FR-5 board
100
50
0
75
50
25
0
0
25
18655
50 75 100 125
T,Temperature (°C)
150
175
18657
Fig. 1 - Steady State Power Derating Curve
tr
Value (%)
100
0
25
50
75 100 125 150 175 200
TA - Ambient Temperature (°C)
Fig. 3 - Pulse Derating Curve
Pulse width (tp) is defined as that
point where the peak current
decays to 50 % of IRSM tr ≤ 10 µs
Peak value - IRSM
100
Half value -
IRSM
2
50
tp
0
0
18656
1
2
3
4
5
t - Time (ms)
Fig. 2 - Pulse Waveform
Rev. 1.8. 30-Oct-2020
Document Number: 81294
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMBZ27VDA
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23. Sep. 2009
17418
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.8. 30-Oct-2020
Document Number: 81294
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000