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MMSZ5243B-G3-18

MMSZ5243B-G3-18

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOD123

  • 描述:

    DIODE ZENER 13V 500MW SOD123

  • 数据手册
  • 价格&库存
MMSZ5243B-G3-18 数据手册
MMSZ5225-G to MMSZ5267-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix (e.g.: MMSZ5225B-G), suffix “C” is ± 2 % tolerance • AEC-Q101 qualified available  (part number on request) DESIGN SUPPORT TOOLS • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V click logo to get started • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Models Available PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 3 to 75 V Test current IZT 1.7 to 20 mA VZ specification Thermal equilibrium Circuit configuration Single ORDERING INFORMATION DEVICE NAME TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000/box 10 000 (8 mm tape on 13" reel) 10 000/box ORDERING CODE MMSZ5225B-G3-08 to MMSZ5267B-G3-08 MMSZ5225-G to MMBZ5267-G MMSZ5225C-G3-08 to MMSZ5267C-G3-08 MMSZ5225B-G3-18 to MMSZ5267B-G3-18 MMSZ5225C-G3-18 to MMSZ5267C-G3-18 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-123 10.3 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT On FR - 4 or FR - 5 board with minimum recommended solder pad layout Ptot 500 mW RthJA 340 K/W Tj 150 °C Storage temperature range Tstg -65 to +175 °C Operating temperature range Top -55 to +150 °C Power dissipation Zener current Thermal resistance junction to ambient air Junction temperature, maximum See table “Electrical Characteristics” On FR - 4 or FR - 5 board with minimum recommended solder pad layout Rev. 1.3, 20-Feb-18 Document Number: 83387 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMSZ5225-G to MMSZ5267-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) MARKING CODE PART NUMBER ±2% ±5% ZENER VOLTAGE RANGE (1) VZ at IZT1 V NOM. TEST CURRENT IZT1 IZT2 mA REVERSE LAEKAGE CURRENT IR at VR μA MAX. DYNAMIC RESISTANCE (2) ZZ at IZT1 ZZK at IZT2  V MAX. TEMPERATURE COEFFICIENT VZ %/°C MAX. TYP. MMSZ5225-G C.0 C0 3 20 0.25 50 1 30 1600 -0.075 MMSZ5226-G D.6 D6 3.3 20 0.25 25 1 28 1600 -0.07 MMSZ5227-G D.7 D7 3.6 20 0.25 15 1 24 1700 -0.065 MMSZ5228-G D.8 D8 3.9 20 0.25 10 1 23 1900 -0.06 MMSZ5229-G D.9 D9 4.3 20 0.25 5 1 22 2000 -0.055 MMSZ5230-G D.0 D0 4.7 20 0.25 5 2 19 1900 ± 0.030 MMSZ5231-G E.6 E6 5.1 20 0.25 5 2 17 1600 ± 0.030 MMSZ5232-G E.7 E7 5.6 20 0.25 5 3 11 1600 0.038 MMSZ5233-G E.8 E8 6 20 0.25 5 3.5 7 1600 0.038 MMSZ5234-G E.9 E9 6.2 20 0.25 5 4 7 1000 0.045 MMSZ5235-G E.0 E0 6.8 20 0.25 3 5 5 750 0.05 MMSZ5236-G F.6 F6 7.5 20 0.25 3 6 6 500 0.058 MMSZ5237-G F.7 F7 8.2 20 0.25 3 6.5 8 500 0.062 MMSZ5238-G F.8 F8 8.7 20 0.25 3 6.5 8 600 0.065 MMSZ5239-G F.9 F9 9.1 20 0.25 3 7 10 600 0.068 MMSZ5240-G F.0 F0 10 20 0.25 3 8 17 600 0.075 MMSZ5241-G H.6 H6 11 20 0.25 2 8.4 22 600 0.076 MMSZ5242-G H.7 H7 12 20 0.25 1 9.1 30 600 0.077 MMSZ5243-G H.8 H8 13 9.5 0.25 0.5 9.9 13 600 0.079 MMSZ5244-G H.9 H9 14 9 0.25 0.1 10 15 600 0.082 MMSZ5245-G H.0 H0 15 8.5 0.25 0.1 11 16 600 0.082 MMSZ5246-G J.6 J6 16 7.8 0.25 0.1 12 17 600 0.083 MMSZ5247-G J.7 J7 17 7.4 0.25 0.1 13 19 600 0.084 MMSZ5248-G J.8 J8 18 7 0.25 0.1 14 21 600 0.085 MMSZ5249-G J.9 J9 19 6.6 0.25 0.1 14 23 600 0.086 MMSZ5250-G J.0 J0 20 6.2 0.25 0.1 15 25 600 0.086 MMSZ5251-G K.6 K6 22 5.6 0.25 0.1 17 29 600 0.087 MMSZ5252-G K.7 K7 24 5.2 0.25 0.1 18 33 600 0.087 MMSZ5253-G K.8 K8 25 5 0.25 0.1 19 35 600 0.089 MMSZ5254-G K.9 K9 27 4.6 0.25 0.1 21 41 600 0.09 MMSZ5255-G K.0 K0 28 4.5 0.25 0.1 21 44 600 0.091 MMSZ5256-G M.6 M6 30 4.2 0.25 0.1 23 49 600 0.091 MMSZ5257-G M.7 M7 33 3.8 0.25 0.1 25 58 700 0.092 MMSZ5258-G M.8 M8 36 3.4 0.25 0.1 27 70 700 0.093 MMSZ5259-G M.9 M9 39 3.2 0.25 0.1 30 80 800 0.094 MMSZ5260-G M.0 M0 43 3 0.25 0.1 33 93 900 0.095 MMSZ5261-G N.6 N6 47 2.7 0.25 0.1 36 105 1000 0.095 MMSZ5262-G N.7 N7 51 2.5 0.25 0.1 39 125 1100 0.096 MMSZ5263-G N.8 N8 56 2.2 0.25 0.1 43 150 1300 0.096 MMSZ5264-G N.9 N9 60 2.1 0.25 0.1 46 170 1400 0.097 MMSZ5265-G N.0 N0 62 2 0.25 0.1 47 185 1400 0.097 MMSZ5266-G P.6 P6 68 1.8 0.25 0.1 52 230 1600 0.097 MMSZ5267-G P.7 P7 75 1.7 0.25 0.1 56 270 1700 0.098 Notes • Maximum VF = 0.9 V, at IF = 10 mA (1) Measured with device junction in thermal equilibrium (2) The Zener impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the Zener current (IZT1 or IZT2) is superimposed on IZT1 or IZT2. Zener Impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units Rev. 1.3, 20-Feb-18 Document Number: 83387 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMSZ5225-G to MMSZ5267-G www.vishay.com Vishay Semiconductors Axis Title Axis Title 10 MMSZ5262 8 MMSZ5263 7 MMSZ5265 4 MMSZ5266 1st line 2nd line 5 2nd line IZ (mA) 1000 MMSZ5264 6 100 3 40 MMSZ5240 35 MMSZ5241 30 MMSZ5242 25 MMSZ5243 20 MMSZ5244 15 MMSZ5267 2 10 1 5 0 20 40 60 80 100 MMSZ5246 0 10 10 0 5 20 Fig. 4 - Breakdown Characteristics Axis Title 100 MMSZ5253 MMSZ5254 14 MMSZ5255 12 MMSZ5256 10 MMSZ5257 8 MMSZ5258 6 MMSZ5259 1000 100 MMSZ5260 80 MMSZ5232 70 MMSZ5233 60 MMSZ5234 50 MMSZ5235 40 MMSZ5236 30 MMSZ5237 20 MMSZ5238 1000 100 10 MMSZ5261 0 20 40 MMSZ5239 0 10 0 2nd line IZ (mA) 16 10000 MMSZ5231 90 1st line 2nd line 2nd line IZ (mA) 15 Fig. 1 - Breakdown Characteristics 10000 2 10 VZ (V) 2nd line Axis Title 4 100 MMSZ5245 VZ (V) 2nd line 20 18 1000 1st line 2nd line 0 10000 45 1st line 2nd line 9 2nd line IZ (mA) 50 10000 60 10 0 2 4 6 8 VZ (V) 2nd line VZ (V) 2nd line Fig. 2 - Breakdown Characteristics Fig. 5 - Breakdown Characteristics 10 Axis Title 10000 30 25 MMSZ5247 1000 MMSZ5248 1st line 2nd line 2nd line IZ (mA) 20 MMSZ5249 15 MMSZ5250 MMSZ5251 10 100 MMSZ5252 5 0 10 0 5 10 15 20 25 30 VZ (V) 2nd line Fig. 3 - Breakdown Characteristics Fig. 6 - Breakdown Characteristics Rev. 1.3, 20-Feb-18 Document Number: 83387 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMSZ5243B-G3-18 价格&库存

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