MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
Surface-Mount ESD Capability Rectifier
FEATURES
eSMP ® Series
• Very low profile - typical height of 0.65 mm
K
Available
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
A
Top View
Bottom View
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
MicroSMP (DO-219AD)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Cathode
Anode
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
3D Models
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM
20 A
VF at IF = 1.0 A
0.925 V
IR
1 μA
TJ max.
175 °C
Package
MicroSMP (DO-219AD)
Circuit configuration
Single
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
SB
SD
SG
SJ
100
200
400
600
UNIT
Max. repetitive peak reverse voltage
VRRM
Max. average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
V
Revision: 06-Aug-2020
Document Number: 89067
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.5 A
TA = 25 °C
IF = 1.0 A
Max. instantaneous forward voltage
VF (1)
IF = 0.5 A
TA = 125 °C
IF = 1.0 A
Max. reverse current
SYMBOL
TA = 25 °C
Rated VR
IR (2)
TA = 125 °C
TYP.
MAX.
0.940
-
1.016
1.1
0.834
-
0.925
0.98
-
1.0
3.7
50
UNIT
V
μA
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
5
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
MSE1PB
MSE1PD
MSE1PG
RθJA (1)
110
RθJL (1)
30
RθJC (1)
40
MSE1PJ
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R
θJL is measured
at the terminal of cathode band.
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC-Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 kΩ
H3B
> 8 kV
AEC-Q101-002
Machine model (contact mode)
C = 200 pF, R = 0 Ω
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 100 pF, R = 1.5 kΩ
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0 Ω
Human body model (contact mode)
C = 150 pF, R = 330 Ω
4
> 8 kV
Human body model (air-discharge mode) (1)
C = 150 pF, R = 330 Ω
4
> 15 kV
IEC 61000-4-2 (2)
VC
3B
> 8 kV
C
> 400 V
Notes
(1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSE1PJ-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSE1PJHM3/89A (1)
0.006
89A
4500
7" diameter plastic tape and reel
MSE1PGHM3/I (1)
0.006
I
16 000
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 06-Aug-2020
Document Number: 89067
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
100
2nd line
Instantaneous Reverse Current (µA)
1.0
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
0
10000
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
1000
TJ = 75 °C
0.1
1st line
Average Forward Rectified Current (A)
1.2
TJ = 25 °C
100
0.01
TJ = -40 °C
0.001
10
0.0001
95
105
115
125
135
145
155
165
175
10
Lead Temperature (°C)
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
10
1.2
D = 0.8
D = 0.5
0.8
D = 0.3
Junction Capacitance (pF)
Average Power Loss (W)
1.0
D = 1.0
D = 0.2
0.6
D = 0.1
T
0.4
0.2
D = tp/T
tp
0.8
1.0
1
0
0
0.2
0.4
0.6
1.2
0.1
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
TJ = 175 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
Average Forward Current (A)
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 25 °C
TJ = -40 °C
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 06-Aug-2020
Document Number: 89067
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP (DO-219AD)
0.059 (1.50)
0.043 (1.10)
Cathode Band
0.055 (1.40)
0.047 (1.20)
0.030 (0.75)
0.022 (0.55)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.030 (0.75)
0.022 (0.55)
Mounting Pad Layout
0.079
(2.00)
0.029 (0.73)
0.025 (0.63)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
Revision: 06-Aug-2020
Document Number: 89067
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000
