MSMP16A-M3/89A

MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile - typical height of 0.65 mm eSMP ® Series • Ideal for automated placement • Oxide planar chip junction • Unidirectional polarity only • Peak pulse power: 150 W (10/1000 μs) Top View Bottom View • Meets MSL level 1, per J-STD-020C, LF maximum peak of 260 °C MicroSMP (DO-219AD) Cathode • ESD capability: 15 kV (air), 8 kV (contact) Anode LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for protecting sensitive equipment against transient overvoltages. 3D 3D 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA VBR 6.67 V to 24.5 V VWM 6.0 V to 20 V PPPM (10 x 1000 μs) 150 W TJ max. 150 °C Polarity Unidirectional Package MicroSMP (DO-219AD) Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (fig. 1) PPPM (1)(2) 150 W IPPM (1) See next table A Peak pulse current with a 10/1000 μs waveform Power dissipation TM = 120 °C PD (2) 1.0 Power dissipation TA = 25 °C PD (3) 0.5 TJ, TSTG -55 to +150 Operating junction and storage temperature range W °C Notes (1) Non-repetitive current pulse, per fig. 1 (2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) Mounted on minimum recommended pad layout Revision: 09-Nov-2020 Document Number: 89457 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR AT IT (1) (V) DEVICE MARKING CODE MSMP6.0A AG MIN. MAX. 6.67 7.37 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM (μA) 10 6.0 200 MAXIMUM VC AT IPPM MAXIMUM VC AT IPPM RD 10/1000 μs VC (V) IPPM (A) 10.3 14.6 RD 8/20 μs RD (Ω) VC (V) IPPM (A) RD (Ω) 0.201 0.087 13.7 73.0 MSMP6.5A AK 7.22 7.98 10 6.5 100 11.2 13.4 0.240 14.5 69.0 0.095 MSMP7.0A AM 7.78 8.60 10 7.0 50 12.0 12.5 0.272 15.7 63.7 0.111 MSMP7.5A AP 8.33 9.21 1.0 7.5 50 12.9 11.6 0.317 17.0 58.8 0.132 MSMP8.0A AR 8.89 9.83 1.0 8.0 20 13.6 11.0 0.342 18.2 54.9 0.152 MSMP8.5A AT 9.44 10.4 1.0 8.5 2.0 14.4 10.4 0.384 19.5 51.3 0.177 MSMP9.0A AV 10.0 11.1 1.0 9.0 2.0 15.4 9.7 0.441 20.6 48.6 0.195 MSMP10A AX 11.1 12.3 1.0 10 1.0 17.0 8.8 0.533 21.7 46.1 0.204 MSMP11A AZ 12.2 13.5 1.0 11 1.0 18.2 8.2 0.570 24.4 41.0 0.266 MSMP12A BE 13.3 14.7 1.0 12 1.0 19.9 7.5 0.690 25.3 39.5 0.268 MSMP13A BG 14.4 15.9 1.0 13 1.0 21.5 7.0 0.803 27.2 36.8 0.307 MSMP14A BK 15.6 17.2 1.0 14 1.0 23.2 6.5 0.928 29.5 33.9 0.364 MSMP15A BM 16.7 18.5 1.0 15 1.0 24.4 6.2 0.960 32.5 30.8 0.455 MSMP16A BP 17.8 19.7 1.0 16 1.0 26.0 5.8 1.092 34.7 28.8 0.520 MSMP17A BR 18.9 20.9 1.0 17 1.0 27.6 5.4 1.233 36.8 27.2 0.586 MSMP18A BT 20.0 22.1 1.0 18 1.0 29.2 5.1 1.382 39.3 25.4 0.676 MSMP20A BV 22.2 24.5 1.0 20 1.0 32.4 4.6 1.706 42.8 23.4 0.783 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per Fig. 1 and derate per Fig. 3 (3) To calculate maximum clamping voltage at surge current uses the following formula: V CL max. = RD x IPP + VBR max. THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VALUE RθJA (1) 250 RθJM (2) 30 UNIT °C/W Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R θJA - junction to ambient (2) Units mounted on PCB with 6.0 mm x 6.0 mm copper pad areas; R θJM - junction to mount IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 kΩ IEC 61000-4-2 (2) Human body model (air discharge mode) (1) C = 150 pF, R = 330 Ω SYMBOL VC CLASS VALUE H3B > 8 kV 4 > 15 kV Notes Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard (1) ORDERING INFORMATION (Example) PREFERRED P/N MSMP6.0A-M3/89A UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.006 89A 4500 7" diameter plastic tape and reel Revision: 09-Nov-2020 Document Number: 89457 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM tr = 10 μs tr = 8 μs Peak Value IPPM CJ - Junction Capacitance (pF) IPPM - Peak Pulse Current (% IRSM) 150 100 Half Value - IPP IPPM 2 50 td = 1000 μs td = 20 μs td 0 1.0 2.0 3.0 Measured at Stand-off Voltage, VWM TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 4.0 6 8 10 12 14 16 18 t - Time (ms) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Pulse Waveform Fig. 4 - Typical Junction Capacitance 20 1.2 100 Non-Repetitive Pulse Waveform Shown in Fig. 1 TA = 25 °C 10 1 0.1 TA = TM, Mounted on 6.0 mm x 6.0 mm Copper Pad PD - Power Dissipation (W) PPPM - Peak Pulse Power (kW) 100 10 0 0.24" x 0.24" (6.0 mm x 6.0 mm) Copper Pad Areas 1.0 0.8 0.6 Mounted on Minimum Recommende Pad Area 0.4 0.2 0.0 0.01 0.1 1 10 100 1000 25 0 10 000 50 75 100 125 150 175 td - Pulse Width (μs) Ambient Temperature (°C) Fig. 2 - Peak Pulse Power Rating Curve Fig. 5 - Power Dissipation Derating Curve 1000 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) Measured at Zero Bias 75 50 25 0 0 25 50 75 100 125 150 175 Junction to Ambient 100 10 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (°C) t - Pulse Duration (s) Fig. 3 - Pulse Power or Current vs. Initial Junction Temperature Fig. 6 - Typical Transient Thermal Impedance Revision: 09-Nov-2020 Document Number: 89457 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 09-Nov-2020 Document Number: 89457 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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