MSQ1PJHM3/H

MSQ1PG, MSQ1PJ www.vishay.com Vishay General Semiconductor Surface-Mount ESD Capability Rectifier FEATURES eSMP ® Series • Very low profile - typical height of 0.65 mm K Available • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current A Top View Bottom View • ESD capability • Meet MSL level 1, per J-STD-020, LF maximum peak of 260 °C MicroSMP (DO-219AD) Anode • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models General purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 400 V, 600 V IFSM 15 A VF at IF = 1.0 A 0.99 V TJ max. 175 °C Package MicroSMP (DO-219AD) Circuit configuration Single MECHANICAL DATA Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Device marking code MSQ1PG MSQ1PJ QG QJ UNIT Max. repetitive peak reverse voltage VRRM Max. average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 15 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range 400 600 V Revision: 04-Aug-2020 Document Number: 87547 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSQ1PG, MSQ1PJ www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A TA = 25 °C IF = 1.0 A Max. instantaneous forward voltage VF (1) IF = 0.5 A TA = 125 °C IF = 1.0 A Max. reverse current SYMBOL TA = 25 °C Rated VR IR (2) TA = 125 °C TYP. MAX. 0.99 - 1.09 1.2 0.88 - 0.99 1.05 - 1.0 6.0 50 UNIT V μA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 650 - ns Typical junction capacitance 4.0 V, 1 MHz CJ 4 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance MSQ1PG MSQ1PJ (1)(2) UNIT 110 RJM (2) °C/W 30 Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Thermal resistance R JA – junction to ambient and RJM - mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k H3B > 8 kV AEC-Q101-002 Machine model (contact mode) C = 200 pF, R = 0  M4 > 400 V JESD 22-A114 Human body model (contact mode) C = 100 pF, R = 1.5 k JESD 22-A115 Machine model (contact mode) C = 200 pF, R = 0  Human body model (contact mode) C = 150 pF, R = 330  4 > 8 kV Human body model (air-discharge mode) (1) C = 150 pF, R = 330  4 > 15 kV IEC 61000-4-2 (2) VC 3B > 8 kV C > 400 V Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSQ1PJ-M3/H 0.006 H 4500 7" diameter plastic tape and reel MSQ1PJHM3/H (1) 0.006 H 4500 7" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 04-Aug-2020 Document Number: 87547 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSQ1PG, MSQ1PJ www.vishay.com Vishay General Semiconductor 1.2 Instantaneous Reverse Current (˩A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 0.8 0.6 0.4 0.2 0 100 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 TJ = -40 °C 0.001 10 95 105 115 125 135 145 155 165 20 30 40 50 Fig. 1 - Forward Current Derating Curve 80 90 100 Fig. 4 - Typical Reverse Leakage Characteristics 100 1.4 D = 0.8 1.2 D = 0.5 Junction Capacitance (pF) Average Power Loss (W) 70 Percent of Rated Peak Reverse Voltage (%) Mount Temperature (°C) D = 0.3 1.0 D = 1.0 D = 0.2 0.8 D = 0.1 0.6 T 0.4 0.2 D = tp/T tp 0 0.2 0.4 0.6 0.8 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 0.0 0.1 1.2 1 10 100 Reverse Voltage (V) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 10 100 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 60 175 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 25 °C TJ = -40 °C 0.01 0.4 0.6 0.8 1.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Transient Thermal Impedance Revision: 04-Aug-2020 Document Number: 87547 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSQ1PG, MSQ1PJ Transient Thermal Impedance (°C/W) www.vishay.com Vishay General Semiconductor 1000 Junction to ambient 100 10 1 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Fig. 7 - Thermal Resistance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 04-Aug-2020 Document Number: 87547 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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