MSS1P4-M3/89A

MSS1P3, MSS1P4 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES ® • Very low profile - typical height of 0.65 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency Top View Bottom View DESIGN SUPPORT TOOLS J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 MicroSMP (DO-219AD) Anode • Meets MSL level 1, per LF maximum peak of 260 °C Cathode click logo to get started • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 30 V, 40 V IFSM 25 A VF at IF = 1.0 A 0.41 V TJ max. 150 °C Package MicroSMP Circuit configuration Single Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code MSS1P3 MSS1P4 13 14 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range 30 40 V Revision: 03-May-2018 Document Number: 89019 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSS1P3, MSS1P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A TJ = 25 °C IF = 1.0 A Maximum instantaneous forward voltage SYMBOL VF (1) IF = 0.5 A TJ = 125 °C IF = 1.0 A TJ = 25 °C Maximum reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz TJ = 125 °C IR (2) TYP. MAX. 0.41 - 0.48 0.55 0.32 - 0.41 0.46 8.5 200 μA 4.5 15 mA 50 - pF MSS1P4 UNIT CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MSS1P3 RJA (1) 125 RJL (1) 30 RJC (1) 40 °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R JL is measured  at the terminal of cathode band. RJC is measured at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSS1P4-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSS1P4HM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel MSS1P4HM3_A/H (1) 0.006 H 4500 7" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.6 Resistive or Inductive Load D = 0.3 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 D = 0.5 D = 0.8 D = 0.2 0.5 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.1 0.4 D = 1.0 0.3 T 0.2 0.1 D = tp/T tp 0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 03-May-2018 Document Number: 89019 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSS1P3, MSS1P4 www.vishay.com Vishay General Semiconductor 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (mA) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 Junction to Ambient 100 10 1 0.01 100 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 03-May-2018 Document Number: 89019 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000