MUR420
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
•
•
•
•
•
•
•
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DO-201AD
Glass passivated pellet chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
Available
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V
MECHANICAL DATA
IFSM
150 A
trr
25 ns
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end
VF
0.710 V
TJ max.
175 °C
Package
DO-201AD
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Maximum repetitive peak reverse voltage
VRRM
200
UNIT
Working peak reverse voltage
VRWM
200
Maximum DC blocking voltage
VDC
200
Maximum average forward rectified current at TA = 80 °C (fig. 1)
IF(AV)
4.0
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
IFSM
150
TJ, TSTG
-65 to +175
°C
VALUE
UNIT
Operating junction and storage temperature range
V
A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
TEST CONDITIONS
3.0 A
4.0 A
TJ = 25 °C
TJ = 25 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
SYMBOL
TJ = 150 °C
TJ = 150 °C
0.710
VF (1)
Maximum forward recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
V
0.890
IR (1)
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum reverse recovery time
0.875
5.0
150
μA
25
trr
tfr
35
ns
25
Note
(1) Pulse test: t = 300 μs pulse, duty cycle 2 %
p
Revision: 01-Aug-2018
Document Number: 88685
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MUR420
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction to ambient
SYMBOL
VALUE
UNIT
RJA (1)
28
°C/W
Note
(1) Lead length = 1/2" on PCB with 1.2" x 1.2" (30.5 mm x 30.5 mm) copper surface
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUR420-E3/54
1.138
54
1400
13" diameter paper tape and reel
MUR420-E3/73
1.138
73
1000
Ammo pack packaging
MUR420-M3/54
1.138
54
1400
13" diameter paper tape and reel
MUR420-M3/73
1.138
73
1000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Current (A)
8.0
6.0
4.0
2.0
25
50
75
100
125
150
175
TJ = 25 °C
0.1
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
150
1000
Instantaneous Reverse Leakage
Current (μA)
Peak Forward Surge Current (A)
TJ = 100 °C
1
0.01
0.2
0
0
TJ = 175 °C
10
125
100
75
50
25
TJ = 175 °C
100
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 01-Aug-2018
Document Number: 88685
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MUR420
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 01-Aug-2018
Document Number: 88685
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000