MUR460-E3/73

MUR440, MUR460 www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 400 V, 600 V IFSM 150 A trr 50 ns VF at IF 1.05 V TJ max. 175 °C Package DO-201AD Circuit configuration Single MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MUR440 MUR460 Maximum repetitive peak reverse voltage VRRM 400 600 Working peak reverse voltage VRWM 400 600 Maximum DC blocking voltage VDC 400 600 Maximum average forward rectified current (fig. 1) IF(AV) 4.0 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 TJ, TSTG -65 to +175 Operating junction and storage temperature range UNIT V A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS 3.0 A 4.0 A Maximum instantaneous reverse current at rated DC blocking voltage SYMBOL TJ = 150 °C TJ = 25 °C TJ = 25 °C TJ = 150 °C MUR440 MUR460 UNIT 1.05 VF (1) 1.25 V 1.28 IR (1) 10 250 Max. reverse recovery time IF = 0.5, IR = 1.0 A, Irr = 0.25 A trr 50 Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM trr 75 Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V tfr 50 μA ns Note (1) Pulse test: t = 300 μs, duty cycle 2 % p Revision: 06-Aug-2018 Document Number: 88686 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MUR440, MUR460 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MUR440 MUR460 RJA (1) Typical thermal resistance junction to ambient UNIT 28 °C/W Note (1) Lead length = 1/2" on PCB with 1.5" x 1.5" copper surface ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MUR460-E3/54 1.138 54 1400 13" diameter paper tape and reel MUR460-E3/73 1.138 73 1000 Ammo pack packaging MUR460-M3/54 1.138 54 1400 13" diameter paper tape and reel MUR460-M3/73 1.138 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 6.0 L = 1/2" 4.0 P.C.B. with 1.5 x 1.5" Copper Pads 2.0 50 100 150 200 1 TJ = 100 °C 0.1 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 150 1000 Instantaneous Reverse Leakage Current (µA) Peak Forward Surge Current (A) TJ = 175 °C 0.01 0.2 0 0 10 125 100 75 50 25 0 1 10 100 100 TJ = 175 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 20 40 60 80 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics 100 Revision: 06-Aug-2018 Document Number: 88686 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MUR440, MUR460 www.vishay.com Vishay General Semiconductor Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 100 Reverse Voltage (V)                 Fig. 5 - Typical Junction Capacitance per Leg PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 06-Aug-2018 Document Number: 88686 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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