MURS120/2

MURS120 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction Available • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V IFSM 40 A trr 25 ns VF 0.71 V TJ max. 175 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER VALUE UNIT MD Device marking code Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V Maximum average forward rectified current at (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range TL = 155 °C TL = 145 °C IF(AV) 1.0 2.0 A IFSM 40 A TJ, TSTG -65 to +175 °C Revision: 08-Apr-2020 Document Number: 88687 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward voltage TJ = 25 °C IF = 1.0 A TJ = 150 °C TJ = 25 °C Maximum instantaneous reverse current at rated DC blocking voltage TJ = 150 °C SYMBOL VF (1) IR (1) VALUE 0.875 0.71 2.0 50 UNIT V μA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM trr 35 ns Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V tfr 25 ns SYMBOL VALUE UNIT RθJL 13 °C/W Note (1) Pulse test: t = 300 μs, duty cycle ≤ 2 % p THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MURS120-E3/52T 0.096 52T 750 7" diameter plastic tape and reel MURS120-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel MURS120HE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel MURS120HE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Apr-2020 Document Number: 88687 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 3.0 2.0 1.0 TJ = 175 °C 10 1000 TJ = 100 °C 1 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 5.0 0.1 TJ = 25 °C 100 0.01 TJ = -40 °C 10 0.001 0 25 0 50 75 100 125 150 0 175 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 50 1000 Junction Capacitance (pF) Peak Forward Surge Current (A) 10000 100 6.0 40 30 20 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0 1 10 100 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Axis Title 10000 2nd line Instantaneous Forward Current (A) 100 TJ = 125 °C 10 1000 TJ = 100 °C 1 TJ = 25 °C 100 0.1 TJ = -40 °C 0.01 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 08-Apr-2020 Document Number: 88687 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 08-Apr-2020 Document Number: 88687 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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