MURS140, MURS160
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Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
Available
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMB (DO-214AA)
Cathode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
3D Models
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
400 V, 600 V
IFSM
35 A
trr
50 ns
VF
1.05 V
TJ max.
175 °C
Package
SMB (DO-214AA)
Circuit configuration
Single
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MURS140
MURS160
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
Working peak reverse voltage
VRWM
400
600
Maximum DC blocking voltage
VDC
400
600
Maximum average forward rectified current at (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
TL = 150 °C
TL = 125 °C
IF(AV)
UNIT
V
1.0
2.0
IFSM
35
TJ, TSTG
-65 to +175
A
°C
Revision: 08-Apr-2020
Document Number: 88688
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140, MURS160
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
VF (1)
IF = 1.0 A
Maximum instantaneous reverse current at
DC blocking voltage
IR (2)
Rated VR
Maximum reverse recovery time
trr
Maximum forward recovery time
tfr
MURS140
MURS160
TJ = 25 °C
1.25
TJ = 150 °C
1.05
TJ = 25 °C
5.0
TJ = 150 °C
150
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
50
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
75
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
50
UNIT
V
μA
ns
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to lead
MURS140
RθJL
MURS160
13
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS160-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
MURS160-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
MURS160HE3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
MURS160HE3_A/I (1)
0.096
I
3200
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 08-Apr-2020
Document Number: 88688
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140, MURS160
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
5.0
4.0
3.0
2.0
1.0
TJ = 175 °C
10
1000
1
1st line
2nd line
2nd line
Instantaneous Reverse Current (µA)
Average Forward Rectified Current (A)
6.0
TJ = 100 °C
0.1
100
TJ = 25 °C
0.01
TJ = -40 °C
10
0.001
0
0
25
50
75
100
125
150
0
175
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
50
100
Junction Capacitance (pF)
Peak Forward Surge Current (A)
10000
100
40
30
20
10
0
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
Number of Cycles at 50 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Axis Title
10000
2nd line
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 100 °C
1000
1
TJ = 25 °C
100
0.1
TJ = -40 °C
0.01
10
0
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 08-Apr-2020
Document Number: 88688
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140, MURS160
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 08-Apr-2020
Document Number: 88688
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000