P4KE530, P4KE550
www.vishay.com
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-41 (DO-204AL)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PRIMARY CHARACTERISTICS
VWM
477 V, 495 V
VBR uni-directional
530 V, 550 V
PPPM
300 W
MECHANICAL DATA
PD
1.0 W
VC
760 A
Case: DO-41 (DO-204L), molded epoxy over passivated
chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
TJ max.
150 °C
Polarity
Uni-directional
Package
DO-41 (DO-204AL)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation (1)(2) (fig.1)
P4KE530
PPPM
Power dissipation on infinite heatsink at TL = 75 °C (fig. 4)
Operating junction and storage temperature range
P4KE550
UNIT
300
W
PD
1.0
W
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Peak pulse power waveform is 10/1000 μs
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
VBR AT IT
(V)
MIN.
TEST CURRENT
IT
(μA)
STAND-OFF VOLTAGE
VWM
(V)
P4KE530
530
100
477
P4KE550
550
100
495
ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Max. clamping voltage
400 mA, 10/1000 μs waveform
VC
760
V
Maximum DC reverse leakage current
at VWM
ID
1.0
μA
650
mV/°C
Typical temperature coefficient
Typical capacitance
of VBR
P4KE530
P4KE550
UNIT
1 MHz, VR = 0 V
CJ
90
pF
1 MHz, VR = 200 V
CJ
7.5
pF
Revision: 04-Mar-2019
Document Number: 88366
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4KE530, P4KE550
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to lead
RJL
75
Typical thermal resistance, junction to ambient
RJA
125
UNIT
°C/ W
ORDERING INFORMATION (Example)
PREFERRED PIN
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4KE530-E3/54
0.350
54
5500
13" diameter paper tape and reel
P4KE550-E3/54
0.350
54
5500
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
150
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
0.1
1
10
100
1000
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
10 000
1.0
0
3.0
2.0
td - Pulse Width (µs)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
4.0
100
1.00
75
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
0.1
tr = 10 µs
50
25
60 Hz
Resistive or
Inductive Load
0.75
0.50
L = 0.375" (9.5 mm)
Lead Lengths
0.25
0
0
25
50
75
100
125
150
175
200
TJ - Initial Temperature (°C)
0
0
25
50
75
100
125
150
175
200
TL - Lead Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Pulse Derating Curve
Revision: 04-Mar-2019
Document Number: 88366
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4KE530, P4KE550
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
APPLICATION NOTES
• Respect thermal resistance (PCB Layout) - as the
temperature coefficient also contributes to the clamping
voltage
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature. Devices with higher breakdown voltage will
have a shorter conduction time and will dissipate less
power
• Clamping voltage is influenced by internal resistance design approximation is 7 V per 100 mA slope
• Keep temperature of TVS lower than TOPSwitch® as a
recommendation
• Maximum current is determined by the maximum TJ and
can be higher than 300 mA. Contact supplier for different
clamping voltage/current arrangements
• Minimum breakdown voltage can be customized for other
applications. Contact supplier
• TOPSwitch® is a registered trademark of Power
Integrations, Inc.
Revision: 04-Mar-2019
Document Number: 88366
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2021
1
Document Number: 91000
