P4KE550A-E3/54

P4KE530, P4KE550 www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in unidirectional only • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-41 (DO-204AL) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. PRIMARY CHARACTERISTICS VWM 477 V, 495 V VBR unidirectional 530 V, 550 V PPPM 300 W MECHANICAL DATA PD 1.0 W VC 760 A Case: DO-41 (DO-204L), molded epoxy over passivated chip Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade TJ max. 150 °C Polarity Unidirectional Package DO-41 (DO-204AL) Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation (1)(2) (fig.1) P4KE550 UNIT 300 PD 1.0 W TJ, TSTG -55 to +150 °C Power dissipation on infinite heatsink at TL = 75 °C (fig. 4) Operating junction and storage temperature range P4KE530 PPPM W Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Peak pulse power waveform is 10/1000 μs ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR AT IT (V) MIN. TEST CURRENT IT (μA) STAND-OFF VOLTAGE VWM (V) P4KE530 530 100 477 P4KE550 550 100 495 ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Max. clamping voltage 400 mA, 10/1000 μs waveform VC 760 V Maximum DC reverse leakage current at VWM ID 1.0 μA Typical temperature coefficient Typical capacitance of VBR P4KE530 P4KE550 UNIT 650 mV/°C 1 MHz, VR = 0 V CJ 90 pF 1 MHz, VR = 200 V CJ 7.5 pF Revision: 16-Sep-2021 Document Number: 88366 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE530, P4KE550 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to lead RθJL 75 Typical thermal resistance, junction to ambient RθJA 125 UNIT °C/ W ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE P4KE530-E3/54 0.350 54 5500 13" diameter paper tape and reel P4KE550-E3/54 0.350 54 5500 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 0.1 1 10 100 1000 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 10 000 1.0 0 3.0 2.0 td - Pulse Width (µs) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 1.00 100 PD - Power Dissipation (W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 0.1 tr = 10 µs 75 50 25 60 Hz Resistive or Inductive Load 0.75 0.50 L = 0.375" (9.5 mm) Lead Lengths 0.25 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 TJ - Initial Temperature (°C) TL - Lead Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Pulse Derating Curve 175 200 Revision: 16-Sep-2021 Document Number: 88366 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE530, P4KE550 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-41 (DO-204AL) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. APPLICATION NOTES • Respect thermal resistance (PCB Layout) - as the temperature coefficient also contributes to the clamping voltage • Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature. Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power • Clamping voltage is influenced by internal resistance design approximation is 7 V per 100 mA slope • Keep temperature of TVS lower than TOPSwitch® as a recommendation • Maximum current is determined by the maximum TJ and can be higher than 300 mA. Contact supplier for different clamping voltage/current arrangements • Minimum breakdown voltage can be customized for other applications. Contact supplier • TOPSwitch® is a registered trademark of Power Integrations, Inc. Revision: 16-Sep-2021 Document Number: 88366 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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