P4SMA150AHE3/5A

P4SMA Series www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • • • • • • • • • SMA (DO-214AC) Cathode Anode (unidirectional) (bidirectional) • LINKS TO ADDITIONAL RESOURCES • 3D 3D Available Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 91 V) Available Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code: P/NHE3 or P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models PRIMARY CHARACTERISTICS VWM (unidirectional) 5.8 V to 459 V VWM (bidirectional) 5.8 V to 185 V VBR (unidirectional) 6.8 V to 540 V VBR (bidirectional) 6.8 V to 220 V PPPM 400 W, 300 W PD 3.3 W IFSM (uni-directional only) 40 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMA (DO-214AC) DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use CA suffix (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TA = 50 °C Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 400 W IPPM See next table A PD 3.3 W IFSM 40 A TJ, TSTG -65 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 300 W above 91 V A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 30-Jun-2021 Document Number: 88367 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PART NUMBER (+)P4SMA6.8A (+)P4SMA7.5A (+)P4SMA8.2A (+)P4SMA9.1A (+)P4SMA10A (+)P4SMA11A (+)P4SMA12A (+)P4SMA13A (+)P4SMA15A (+)P4SMA16A (+)P4SMA18A (+)P4SMA20A (+)P4SMA22A (+)P4SMA24A (+)P4SMA27A (+)P4SMA30A (+)P4SMA33A (+)P4SMA36A (+)P4SMA39A (+)P4SMA43A (+)P4SMA47A (+)P4SMA51A (+)P4SMA56A (+)P4SMA62A (+)P4SMA68A (+)P4SMA75A (+)P4SMA82A (+)P4SMA91A (+)P4SMA100A (+)P4SMA110A (+)P4SMA120A (+)P4SMA130A (+)P4SMA150A (+)P4SMA160A (+)P4SMA170A (+)P4SMA180A (+)P4SMA200A (+)P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA540A DEVICE MARKING CODE UNI BI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C - BREAKDOWN VOLTAGE STAND-OFF TEST VBR AT IT (1) VOLTAGE CURRENT VWM (V) IT (mA) (V) MIN. MAX. 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459 MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (μA) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.91 0.87 0.73 0.62 0.55 0.50 0.46 0.43 0.41 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 104 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.089 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bidirectional types with V of 10 V and less, the I limit is doubled R D (5) V = 3.5 V at I = 25 A (unidirectional only) F F (+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both unidirectional and bidirectional device Revision: 30-Jun-2021 Document Number: 88367 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient air (1) RθJA 120 Typical thermal resistance, junction to lead RθJL 30 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED P/N P4SMA6.8A-E3/61 0.064 VOLTAGE RANGE (V) UNI - BI - 6.8 to 220 6.8 to 220 PACKAGE CODE BASE QUANTITY DELIVERY MODE 61 1800 7" diameter plastic tape and reel P4SMA6.8A-M3/61 0.064 6.8 to 540 6.8 to 220 61 1800 7" diameter plastic tape and reel P4SMA6.8A-E3/5A 0.064 6.8 to 220 6.8 to 220 5A 7500 13" diameter plastic tape and reel P4SMA6.8A-M3/5A 0.064 6.8 to 540 6.8 to 220 5A 7500 13" diameter plastic tape and reel 0.064 6.8 to 220 6.8 to 220 H 1800 7" diameter plastic tape and reel 0.064 6.8 to 220 6.8 to 220 I 7500 13" diameter plastic tape and reel 0.064 250 to 540 - H 1800 7" diameter plastic tape and reel 0.064 250 to 540 - I 7500 13" diameter plastic tape and reel P4SMA6.8AHE3_A/H (1) P4SMA6.8AHM3_A/H (1) P4SMA6.8AHE3_A/I (1) P4SMA6.8AHM3_A/I (1) P4SMA250AHM3_B/H (2) P4SMA250AHM3_B/I (2) Notes (1) _A is available for P4SMA6.8(C)A to P4SMA220(C)A, AEC-Q101 qualified (2) _B is available for P4SMA250A to P4SMA540A, AEC-Q101 qualified Revision: 30-Jun-2021 Document Number: 88367 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Stand-Off Voltage VWM 1000 Uni-Directional 100 Bi-Directional 10 10 ms 1 10 100 td - Pulse Width (s) VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 1000 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % P4SMA6.8A P4SMA91A P4SMA100A P4SMA540A CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 25 50 75 100 125 150 175 10 1 0.001 0 0 100 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP 2 IPPM 50 10/1000 µs Waveform as defined by R.E.A. TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 td 0 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform 4.0 10 1 5 10 50 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only Revision: 30-Jun-2021 Document Number: 88367 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 30-Jun-2021 Document Number: 88367 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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