P6SMB Series
www.vishay.com
Vishay General Semiconductor
Surface-Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
SMB (DO-214AA)
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
• Glass passivated chip junction
• Available in unidirectional and bidirectional
Available
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
VWM (unidirectional)
5.8 V to 459 V
VWM (bidirectional)
5.8 V to 185 V
VBR (unidirectional)
6.8 V to 540 V
VBR (bidirectional)
6.8 V to 220 V
PPPM
600 W
PD
5.0 W
IFSM (unidirectional only)
100 A
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
Package
SMB (DO-214AA)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. P6SMB10CA).
Electrical characteristics apply in both directions.
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for unidirectional types the band denotes cathode
end, no marking on bidirectional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
PPPM
600
W
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TA = 50 °C
PD
5.0
W
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)
Operating junction and storage temperature range
IFSM
100
A
TJ, TSTG
-65 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 20-Jul-2020
Document Number: 88370
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PART
NUMBER
DEVICE
MARKING
CODE
UNI
BI
BREAKDOWN
STAND-OFF
VOLTAGE
TEST
VBR AT IT (1) CURRENT VOLTAGE
VWM
(V)
IT
(V)
(mA)
MIN. MAX.
6V8A 6V8C 6.45
7.14
10
5.80
P6SMB6.8A
7V5A 7V5C 7.13
7.88
10
6.40
P6SMB7.5A
8V2A 8V2C 7.79
8.61
10
7.02
P6SMB8.2A
9V1A 9V1C 8.65
9.55
1.0
7.78
P6SMB9.1A
10A 10C
9.50
10.5
1.0
8.55
P6SMB10A
11A 11C
10.5
11.6
1.0
9.40
P6SMB11A
12A 12C
11.4
12.6
1.0
10.2
P6SMB12A
13A 13C
12.4
13.7
1.0
11.1
P6SMB13A
15A 15C
14.3
15.8
1.0
12.8
P6SMB15A
16A 16C
15.2
16.8
1.0
13.6
P6SMB16A
18A 18C
17.1
18.9
1.0
15.3
P6SMB18A
20A 20C
19.0
21.0
1.0
17.1
P6SMB20A
22A 22C
20.9
23.1
1.0
18.8
P6SMB22A
24A 24C
22.8
25.2
1.0
20.5
P6SMB24A
27A 27C
25.7
28.4
1.0
23.1
P6SMB27A
30A 30C
28.5
31.5
1.0
25.6
P6SMB30A
33A 33C
31.4
34.7
1.0
28.2
P6SMB33A
36A 36C
34.2
37.8
1.0
30.8
P6SMB36A
39A 39C
37.1
41.0
1.0
33.3
P6SMB39A
43A 43C
40.9
45.2
1.0
36.8
P6SMB43A
47A 47C
44.7
49.4
1.0
40.2
P6SMB47A
51A 51C
48.5
53.6
1.0
43.6
P6SMB51A
56A 56C
53.2
58.8
1.0
47.8
P6SMB56A
62A 62C
58.9
65.1
1.0
53.0
P6SMB62A
68A 68C
64.6
71.4
1.0
58.1
P6SMB68A
75A 75C
71.3
78.8
1.0
64.1
P6SMB75A
82A 82C
77.9
86.1
1.0
70.1
P6SMB82A
91A 91C
86.5
95.5
1.0
77.8
P6SMB91A
100A 100C 95.0
105
1.0
85.5
P6SMB100A
110A 110C 105
116
1.0
94.0
P6SMB110A
120A 120C 114
126
1.0
102
P6SMB120A
130A 130C 124
137
1.0
111
P6SMB130A
150A 150C 143
158
1.0
128
P6SMB150A
160A 160C 152
168
1.0
136
P6SMB160A
170A 170C 162
179
1.0
145
P6SMB170A
180A 180C 171
189
1.0
154
P6SMB180A
200A 200C 190
210
1.0
171
P6SMB200A
220A 220C 209
231
1.0
185
P6SMB220A
250A
237
263
1.0
214
P6SMB250A
300A
285
315
1.0
256
P6SMB300A
350A
333
368
1.0
300
P6SMB350A
400A
380
420
1.0
342
P6SMB400A
440A
418
462
1.0
376
P6SMB440A
480A
456
504
1.0
408
P6SMB480A
510A
485
535
1.0
434
P6SMB510A
540A
513
567
1.0
459
P6SMB540A
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types with V
WM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE CA62.35
(5) V = 3.5 V at I = 50 A (uni-directional only)
F
F
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3)
(μA)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.8
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
MAXIMUM
MAXIMUM
CLAMPING TEMPERATURE
COEFFICIENT
VOLTAGE
OF VBR
AT IPPM
VC (V)
(%/°C)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Revision: 20-Jul-2020
Document Number: 88370
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient air (1)
RθJA
100
Typical thermal resistance, junction to lead
RθJL
20
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
VOLTAGE RANGE
(V)
UNIT
WEIGHT
(g)
PREFERRED P/N
UNI
BI
PACKAGE
CODE
BASE
QUANTITY
DELIVERY MODE
7" diameter plastic tape and reel
P6SMB6.8A-E3/52
0.096
6.8 to 220
6.8 to 220
52
750
P6SMB6.8A-M3/52
0.096
6.8 to 540
6.8 to 220
52
750
7" diameter plastic tape and reel
P6SMB6.8A-E3/5B
0.096
6.8 to 220
6.8 to 220
5B
3200
13" diameter plastic tape and reel
P6SMB6.8A-M3/5B
0.096
6.8 to 540
6.8 to 220
5B
3200
13" diameter plastic tape and reel
0.096
6.8 to 220
6.8 to 220
H
750
7" diameter plastic tape and reel
0.096
6.8 to 220
6.8 to 220
I
3200
13" diameter plastic tape and reel
P6SMB250AHM3_C/H (2)
0.096
250 to 540
-
H
750
7" diameter plastic tape and reel
P6SMB250AHM3_C/I (2)
0.096
250 to 540
-
I
3200
13" diameter plastic tape and reel
P6SMB6.8AHE3_A/H (1)
P6SMB6.8AHM3_A/H (1)
P6SMB6.8AHE3_A/I (1)
P6SMB6.8AHM3_A/I (1)
Notes
_A is available for P6SMB6.8(C)A to P6SMB220(C)A, AEC-Q101 qualified
(2) _C is available for P6SMB250A to P6SMB540A, AEC-Q101 qualified
(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
PPPM - Peak Pulse Power (kW)
100
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
100
75
50
25
0
0
25
50
75
100
125
150
175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 20-Jul-2020
Document Number: 88370
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
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100
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Transient Thermal Impedance (°C/W)
IPPM - Peak Pulse Current, % IRSM
Vishay General Semiconductor
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
1.0
3.0
2.0
4.0
0.01
0.1
1
10
100
1000
t - Time (ms)
tp - Pulse Duration (s)
Fig. 3 - Pulse Waveform
Fig. 5 - Typical Transient Thermal Impedance
200
6000
Measured at
Zero Bias
Peak Forward Surge Current (A)
CJ - Junction Capacitance (pF)
1.0
0.1
0.001
0
0
10
1000
VR, Measured at
Stand-Off Voltage VWM
100
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
10
1
10
100
200
100
10
1
VWM - Reverse Stand-Off Voltage (V)
Number of Cycles at 60 Hz
Fig. 4 - Typical Junction Capacitance
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 20-Jul-2020
Document Number: 88370
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021
1
Document Number: 91000