PB4008-E3/45

PB4006, PB4008, PB4010 www.vishay.com Vishay General Semiconductor Enhanced isoCink+TM Bridge Rectifiers FEATURES isoCink+™ • UL recognition file number E312394 (QQQX2) UL 1557 (see *) ~ ~ • Enhanced high-current density single in-line package - + ~ ~ + • Superior thermal conductivity • Glass passivated chip junction • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style PB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS + ~ ~ - *Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. LINKS TO ADDITIONAL RESOURCES General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: PB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, industrial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test 3D 3D 3D Models per Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. PRIMARY CHARACTERISTICS Recommended Torque: 5.7 cm-kg (5 inches-lbs) Package PB IF(AV) 40 A VRRM 600 V, 800 V, 1000 V IFSM 400 A IR 10 μA VF at IF = 20 A 0.94 V TJ max. 150 °C Circuit configuration In-line MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 87 °C (1) TA = 25 °C (2) SYMBOL PB4006 PB4008 PB4010 UNIT VRRM 600 800 1000 V IO 40 4.4 A 400 A I2t 664 A2s TJ, TSTG -55 to +150 °C IFSM Notes (1) With heatsink (2) Without heatsink, free air Revision: 25-Mar-2021 Document Number: 84808 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PB4006, PB4008, PB4010 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) IF = 20 A Reverse current per diode (2) rated VR Typical junction capacitance per diode 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR CJ TYP. MAX. 1.01 1.10 0.94 1.00 - 10 130 500 120 - UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance PB4006 PB4008 RθJC (1) 0.75 RθJA (2) 18 PB4010 UNIT °C/W Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N PB4006-E3/45 UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 7.53 45 20 Tube Revision: 25-Mar-2021 Document Number: 84808 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PB4006, PB4008, PB4010 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 40 Instantaneous Forward Current (A) Average Forward Output Current (A) 45 With Heatsink Sine-Wave, R-Load 35 30 25 TC 20 TC 15 10 5 TC Measured at Device Bottom 0 20 0 40 60 80 100 120 140 TA = 100 °C TA = 25 °C 1 TA = 85 °C 0.5 0.6 0.8 0.7 1.0 0.9 1.1 1.2 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 4 - Typical Forward Characteristics Per Diode 1000 Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) TA = 125 °C 10 0.1 0.4 160 5 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 1 0 TA = 150 °C TA = 125 °C 100 TA = 100 °C 10 TA = 85 °C 1 TA = 25 °C 0.1 0.01 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Current Derating Curve Fig. 5 - Typical Reverse Characteristics Per Diode 1000 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 90 Junction Capacitance (pF) Forward Power Dissipation (W) TA = 150 °C 80 70 60 50 40 30 20 100 10 10 0 0 4 8 12 16 20 24 28 32 36 40 44 48 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 3 - Forward Power Dissipation Fig. 6 - Typical Junction Capacitance Per Diode Revision: 25-Mar-2021 Document Number: 84808 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PB4006, PB4008, PB4010 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type PB Front Side View 0.118 (3.0) x 45° CHAMFER Side View 1.193 (30.3) 1.169 (29.7) 0.201 (5.1) 0.177 (4.5) 0.799 (20.3) 0.776 (19.7) 0.441 (11.2) 0.425 (10.8) 0.205 (5.20) 0.189 (4.80) 0.106 (2.70) 0.091 (2.30) 0.303 (7.70) 0.287 (7.30) 0.303 (7.70) 0.287 (7.30) 0.134 (3.4) 0.118 (3.0) 120° TYP. 5° TYP. 5° TYP. 0.118 (3.0) 0.102 (2.6) 0.165 (4.20) 0.150 (3.80) 0.708 (18.0) 0.669 (17.0) 0.094 (2.40) 0.079 (2.00) 0.043 (1.10) 0.035 (0.90) 0.402 (10.2) 0.386 (9.80) 0.145 (3.7) 0.130 (3.3) 0.161 (4.1) 0.138 (3.5) 0.032 (0.80) 0.024 (0.60) Back Side View 1.041 (26.44) REF. 0.070 (1.78) REF. 0.088 (2.24) REF. 0.633 (16.07) REF. 0.214 (5.44) REF. 0.066 (1.68) REF. Revision: 25-Mar-2021 Document Number: 84808 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000