PLZ12B-G3/H

PLZ12B-G3/H

  • 厂商:

    TFUNK(威世)

  • 封装:

    DO219AC

  • 描述:

    DIODE ZENER 12V 500MW DO219AC

  • 详情介绍
  • 数据手册
  • 价格&库存
PLZ12B-G3/H 数据手册
PLZ Series www.vishay.com Vishay Semiconductors Zener Diodes Permitting 500 mW Power Dissipation FEATURES eSMP® Series • • • • • 2 1 20278 • LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models • • Related Documents PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Circuit configuration VALUE 2.0 to 39 5 to 20 Pulse current Single • • • • UNIT V mA Available Sillicon planar Zener diodes, ultra small Low profile MicroSMF (DO-219AC) package Low leakage current Excellent stability High temperature soldering: 260 °C / 10 s at terminals Wave and reflow solderable (reflow as per JPC / JEDEC® J-STD 020) (double wave as per IEC 61760-1) AEC-Q101 qualified available Base P/N-G3 - RoHS-compliant, green, industrial grade Base P/N-HG3 - RoHS-compliant, green, AEC-Q101 qualified ESD immunity acc. IEC 61000-4-2 acc. to part table Surge performance acc. to part table Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME ORDERING CODE PLZ-Series Part number-G3/H PLZ-Series Part number-HG3_A/H TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 4500 per 7" reel (8 mm tape) 22 500 / box PACKAGE PACKAGE NAME MicroSMF (DO-219AC) WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 4.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C / 10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE Power dissipation Mounted on FR4 board 50 mm x 50 mm x 1.6 mm, solder land 10 mm x 10 mm, Tamb = 85 °C Ptot 500 Power dissipation Mounted on FR4 board 50 mm x 50 mm x 1.6 mm, solder land 10 mm x 10 mm, Tamb = 25 °C Ptot 960 Power dissipation Mounted on FR4 board with recommended soldering footpads (reflow) Ptot 340 tp = 8/20 μs acc. IEC 61000-4-5 (PLZ5V1A to PLZ39D) PZSM 100 W tp = 8/20 μs acc. IEC 61000-4-5 (PLZ2V7A to PLZ4V7C) PZSM 70 W Z-current IZ Ptot/VZ mA Junction temperature Tj 150 Tstg -55 to +150 TEST CONDITION SYMBOL VALUE UNIT Mounted on FR4 board 50 mm x 50 mm x 1.6 mm, solder land 10 mm x 10 mm RthJA 130 K/W RthJL 40 K/W TYP. MAX. UNIT 0.8 0.9 V Non-repetitive peak surge power dissipation Storage temperature range UNIT mW °C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Typ. thermal resistance junction to ambient air Typ. thermal resistance junction to lead ELECTRICAL SPECIFICATIONS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward Voltage TEST CONDITION SYMBOL IF = 10 mA VF MIN. Rev. 1.7, 27-May-2020 Document Number: 84830 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PLZ Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER MARKING CODE ZENER VOLTAGE RANGE (1) TEST CURRENT VZ at IZT IZT1 V mA MIN. MAX. PLZ2V0A 2A0 1.88 2.10 PLZ2V0B 2B0 2.02 2.20 PLZ2V2A 2A2 2.12 2.30 PLZ2V2B 2B2 2.22 2.41 PLZ2V4A 2A4 2.33 2.52 PLZ2V4B 2B4 2.43 2.63 PLZ2V7A 2A7 2.54 2.75 PLZ2V7B 2B7 2.69 2.91 PLZ3V0A 3A0 2.85 3.07 PLZ3V0B 3B0 3.01 3.22 PLZ3V3A 3A3 3.16 3.38 PLZ3V3B 3B3 3.32 3.53 PLZ3V6A 3A6 3.455 3.695 PLZ3V6B 3B6 3.60 3.845 PLZ3V9A 3A9 3.74 4.10 PLZ3V9B 3B9 3.89 4.16 PLZ4V3A 4A3 4.04 4.29 PLZ4V3B 4B3 4.17 4.43 PLZ4V3C 4C3 4.30 4.57 PLZ4V7A 4A7 4.44 4.68 PLZ4V7B 4B7 4.55 4.80 PLZ4V7C 4C7 4.68 4.93 PLZ5V1A 5A1 4.81 5.07 PLZ5V1B 5B1 4.94 5.20 PLZ5V1C 5C1 5.09 5.37 PLZ5V6A 5A6 5.28 5.55 PLZ5V6B 5B6 5.45 5.73 PLZ5V6C 5C6 5.61 5.91 PLZ6V2A 6A2 5.78 6.09 PLZ6V2B 6B2 5.96 6.27 PLZ6V2C 6C2 6.12 6.44 PLZ6V8A 6A8 6.29 6.63 PLZ6V8B 6B8 6.49 6.83 PLZ6V8C 6C8 6.66 7.01 PLZ7V5A 7A5 6.85 7.22 PLZ7V5B 7B5 7.07 7.45 PLZ7V5C 7C5 7.29 7.67 PLZ8V2A 8A2 7.53 7.92 PLZ8V2B 8B2 7.78 8.19 PLZ8V2C 8C2 8.03 8.45 PLZ9V1A 9A1 8.29 8.73 PLZ9V1B 9B1 8.57 9.01 PLZ9V1C 9C1 8.83 9.30 Notes (1) Pulse test: t  40 ms p (2) Pulse test: t = 8/20 μs acc. IEC 61000-4-5 p (3) Contact and air discharge acc. IEC 61000-4-2 REVERSE CURRENT DYNAMIC RESISTANCE PEAK PULSE CURRENT (2) REVERSE CLAMPING VOLTAGE AT IPPM ESD IMMUNITY (3) IR at VR ZZ at IZT IPPM VC VESD  A V kV MAX. MAX. 5.56 5.56 5.67 5.67 5.79 5.79 5.91 5.98 6.02 6.18 6.22 6.29 6.40 6.47 6.54 6.60 6.66 6.73 6.80 6.93 7.06 7.40 8.14 8.23 8.40 8.61 8.82 8.99 9.32 9.45 9.66 10.29 10.50 10.60 11.06 11.34 11.54 11.80 12.00 12.60 12.86 13.17 13.55 20 20 20 20  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30  30 μA V MAX. 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 MAX. 120 0.5 140 120 0.7 120 120 1.0 100 100 1.0 100 20 1.0 80 10 1.0 70 5 1.0 60 5 1.0 50 5 1.0 40 5 1.0 25 5 1.5 20 5 2.5 13 5 3.0 10 2 3.5 8 0.5 4.0 8 0.5 5.0 8 0.5 6.0 8 9.9 9.9 9.7 9.7 9.5 9.5 11.8 11.7 11.6 11.3 11.2 11.1 10.9 10.8 10.7 10.6 10.5 10.4 10.3 10.1 9.9 9.4 12.3 12.1 11.9 11.6 11.3 11.1 10.7 10.5 10.3 9.7 9.5 9.4 9.0 8.8 8.6 8.4 8.3 7.9 7.8 7.6 7.4 Rev. 1.7, 27-May-2020 Document Number: 84830 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ12B-G3/H
物料型号:VISHAY PLZ系列

器件简介:这是一系列允许500毫瓦功率耗散的硅平面齐纳二极管,具有超小型的AUTOMOTIVE可用eSMP®系列,符合RoHS标准,无卤素,并且有低轮廓MicroSMF (DO-219AC)封装。

引脚分配:文档中没有提供具体的引脚分配图,但提到了器件使用MicroSMF(DO-219AC)封装。

参数特性: - 齐纳电压范围:2.0V至39V - 测试电流:5至20毫安 - 电路配置:单路 - 功率耗散:在不同条件下,功率耗散的值不同,例如在85°C环境温度下,安装在FR4板上的功率耗散为500毫瓦。

功能详解:文档提供了详细的电气特性,包括正向电压、反向电流、动态电阻、峰值脉冲电流、反向钳位电压和ESD抗扰度等。

应用信息:适用于汽车电子、工业级和AEC-Q101认证的电子应用。

封装信息:MicroSMF(DO-219AC)封装,重量为4.8毫克,阻燃等级为UL 94V-0,湿度敏感等级为MSL 1级,焊接条件为260°C/10秒。
PLZ12B-G3/H 价格&库存

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PLZ12B-G3/H
  •  国内价格 香港价格
  • 4500+0.609814500+0.07890
  • 9000+0.551799000+0.07139
  • 13500+0.5222013500+0.06756
  • 22500+0.4889322500+0.06326
  • 31500+0.4692331500+0.06071
  • 45000+0.4500845000+0.05823

库存:874

PLZ12B-G3/H
  •  国内价格 香港价格
  • 1+3.074031+0.39770
  • 10+1.8912210+0.24468
  • 100+1.18398100+0.15318
  • 500+0.87562500+0.11329
  • 1000+0.775781000+0.10037
  • 2000+0.691642000+0.08948

库存:874